AlGaN/GaN Modulation-Doped Field-Effect Transistors with An Mg-doped Carrier Confinement Layer

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概要

• 論文の詳細を見る

• AlGaN/GaN modulation-doped field-effect transistors (MODFETs) with and without the Mg-doped semi-insulating carrier confinement layer were prepared and a detailed study on the electrical properties of these samples was performed. The addition of the Mg-doped semi-insulating carrier confinement layer resulted in the degradation of crystal quality. Thus, higher values of $g_{\text{m}}$, $I_{\text{DS}}$ and the gate voltage swing are achieved by conventional MODFETs. The source-to-drain (S–D) leakage current of conventional MODFETs was also higher, since carriers could flow through the thick unintentionally doped GaN layer. However, the S–D leakage current was reduced from 50 mA/mm to 6 mA/mm with the insertion of the Mg-doped semi-insulating carrier confinement layer.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-06-15

著者

• LIU Chun-Hsing

  Department of Electronic and Computering Engineering, Nan Jeon Institute of Technology

• TSAI Tzong-Yow

  Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University

• HSU Tzu-Hsuan

  Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University

• Chang Shoou-jinn

  Institute Of Electro-optical Science And Engineering Center For Micro/nano Science And Technology Na

• Wei Sun-chin

  Institute Of Electrical Engineering Da-yeh University

• Liaw Uang-heay

  Department Of Electronic Engineering Chin-min College

• Su Yan-kuin

  Institute Of Electro-optical Science And Engineering Advance Optoelectronics Technology Center Natio

• Wei Sun-Chin

  Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan

• Tsai Tzong-Yow

  Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan

• Liaw Uang-Heay

  Department of Electronic Engineering, Chin-Min College, To-Fen 351, Taiwan

• Chen Shih-Chih

  Institute of Electronics and Information Engineering, National Yunlin University of Science and Technology, Touliu, Yunlin 640, Taiwan

• Hsu Tzu-Hsuan

  Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan

• Liu Chun-Hsing

  Department of Electronic Engineering, Nan-Jeon Junior College of Technology and Commerce, Yan-Hsui 737, Taiwan

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