Postdeposition Annealing Effect on Redshift Behavior of Electroluminescence for Polymer Light-Emitting Diodes

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概要

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• In this study, polymer light-emitting diodes (PLEDs) with a 2,3-dibutoxy-1,4-poly(phenylene vinylene) (DBPPV) emissive layer were fabricated. After the PLEDs were fabricated, they were postdeposition annealed (post-annealed) at various temperatures, 90, 120, 180, and 210 °C. It was clear that the anomalous current–voltage phenomenon existed at the annealing temperature below 120 °C. The anomalous current–voltage phenomenon was eliminated by post-annealing at temperature of 120 °C and higher. As shown in the electroluminescent (EL) spectra, redshift behavior was found which was attributable to post-annealing effect on the PLEDs. From the measurement of atomic force microscopic (AFM) images, annealing increased the average roughness of DBPPV films. The refractive indexes of DBPPV films also increased because of thermal annealing. That is, thermal annealing increased the number of interchain interactions of DBPPV films. This result caused the redshift behavior of PLED's EL spectrum.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-10-15

著者

• TU Ming-Lung

  Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University

• Su Yan-kuin

  Institute Of Electro-optical Science And Engineering Advance Optoelectronics Technology Center Natio

• Lu Wei-Chung

  Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C.

• Tu Ming-Lung

  Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C.

• Su Yan-Kuin

  Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C.

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