InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO2 Layers

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概要

• 論文の詳細を見る

• InGaN/GaN multiple-quantum well (MQW) structure was epitaxial growth by metal-organic chemical vapor deposition (MOCVD). Their MIS photodiodes with SiO2 interlayer were fabricated successfully using photochemical vapor deposition. The normal undoped-GaN metal-semiconductor-metal (MSM) potodiodes were also prepared to compare with them. It was found that the minimum dark current of InGaN/GaN MQW photodiodes was $4.2\times 10^{-13}$ A with 88 nm-thick SiO2 layer under 5 V reverse bias voltage. Furthermore, it was found that we can significantly reduce the dark current of this photodiodes by inserting a thin SiO2 interlayer in between metal electrode and the underneath InGaN/GaN MQW. With a 53 nm-thick SiO2 interlayer, it was also found that we could achieve a high $1.53\times 10^{3}$ photo current to dark current contrast.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-04-15

著者

• CHANG Ping-Chuan

  Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University

• JHOU Yi-De

  Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University

• LIU Chun-Hsing

  Department of Electronic and Computering Engineering, Nan Jeon Institute of Technology

• HUNG Hung

  Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University

• Chang Shoou-jinn

  Institute Of Electro-optical Science And Engineering Center For Micro/nano Science And Technology Na

• Wang Shih-ming

  Department Of Electronic Engineering National Yunlin University Of Science And Technology

• Chen Po-chang

  Department Of Electronic And Computering Engineering Nan Jeon Institute Of Technology

• Su Yan-kuin

  Institute Of Electro-optical Science And Engineering Advance Optoelectronics Technology Center Natio

• Chen Chin-hsiang

  Department Of Electronic Engineering Cheng Shiu University

• Chen Po-Chang

  Department of Electronic and Computering Engineering, Nan Jeon Institute of Technology, Yan-Hsui, Taiwan 737, R.O.C.

• Chang Shoou-Jinn

  Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.

• Jhou Yi-De

  Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.

• Wang Shih-Ming

  Department of Electronic Engineering, National Yunlin University of Science and Technology, R.O.C.

• Chang Ping-Chuan

  Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.

• Liu Chun-Hsing

  Department of Electronic and Computering Engineering, Nan Jeon Institute of Technology, Yan-Hsui, Taiwan 737, R.O.C.

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