GaN-Based Metal--Insulator--Semiconductor Ultraviolet Photodetectors with CsF Current-Suppressing Layer

スポンサーリンク

概要

• 論文の詳細を見る

• GaN metal--insulator--semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with the CsF current-suppressing layer were, for the first time, fabricated and characterized successfully. It was found that we can achieve a low dark current and large photocurrent-to-dark-current contrast ratio from the proposed devices with the use of the CsF current-suppressing layer. With a 5 V applied bias, it was found that the leakage current of the fabricated MIS PDs with the CsF current-suppressing layer was 7.1\times 10^{-10} A. This small leakage current should be attributed to the large barrier height caused by the insertion of the CsF current-suppressing layer. With a 5 V applied bias, the barrier height of \Phi_{\text{B}} = 0.942 can be calculated from the dark current--voltage (I--V) characteristics. We can also achieve a large UV-to-visible rejection ratio from the PDs with the CsF current-suppressing layer.

• 2012-04-25

著者

• Chen Chin-hsiang

  Department Of Electronic Engineering Cheng Shiu University

• Chen Chin-Hsiang

  Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.

• Tsai Yu-Hsuan

  Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.

• Tsai Cheng-Nan

  Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.

• Yen Shuo-Fu

  Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.

• Su Peng-Yin

  Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.

• Cheng Chung-Fu

  Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.

• Tsai Chia-Ming

  Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.

• TSAI Yu-Hsuan

  Department of Biomolecular Systems, Max Planck Institute of Colloids and Interfaces

関連論文

• Self-Organized InGaN Nanodots Grown by Metal-Organic Chemical Vapor Deposition System
• High-Efficiency Electrophosphorescence Red Organic Light-Emitting Diodes Using a Thin 1,3-Bis[2-(2,2$'$-bipyridin-6-yl)-1,3,4-oxadiazol-5-yl]benzene Cleaving Layer in an Ir-Complex-Doped Emitter Layer
• GaN-Based Metal--Semiconductor--Metal Ultraviolet Photodetectors with the ZrO2 Insulating Layer
• Quaternary AlInGaN Solar Blind UV Detectors with Photo-CVD SiO_2 Cap Layers
• Organic Light-Emitting Diodes with Carrier Balance Structures
• AlInGaN 310nm Ultraviolet Metal-Insulator-Semiconductor Sensors with Photo-Chemical-Vapor-Deposition SiO_2 Cap Layers
• AlGaN Metal–Semiconductor–Metal Photodetectors with Low-Temperature AlN Cap Layer and Recessed Electrodes
• GaN Ultraviolet Schottky Barrier Photodetectors with ZrO_2 or SiO_2 Insulators
• Nitride-Based Metal–Semiconductor–Metal Photodetectors with InN/GaN Multiple Nucleation Layers
• GaN-Based Metal--Insulator--Semiconductor Ultraviolet Photodetectors with CsF Current-Suppressing Layer
• InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO2 Layers
• GaN-Based Metal--Insulator--Semiconductor Ultraviolet Sensors with CsF Insulating Layer
• GaN-Based Metal-Insulator-Semiconductor Ultraviolet Sensors with CsF Insulating Layer (Special Issue : Recent Advances in Nitride Semiconductors)
• GaN-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors with HfO₂ Insulators (Special Issue : Recent Advances in Nitride Semiconductors)
• High-Indium-Content InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes
• 寄生性原虫類のグリコシルホスファチジルイノシトール

もっと見る 閉じる

スポンサーリンク