GaN-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors with HfO₂ Insulators (Special Issue : Recent Advances in Nitride Semiconductors)
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概要
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Nitride-based metal--insulator--semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with a hafnium oxide (HfO<inf>2</inf>) insulating layer was fabricated for the first time and characterized successfully. It was found that we can achieve a small dark current and a large photocurrent to dark current contrast ratio using the proposed device with the HfO<inf>2</inf>insulating layer. Furthermore, the noise equivalent power was substantially reduced, and detectivity was increased using HfO<inf>2</inf>insulators.
- 2013-08-25
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