Chen Chin-hsiang | Department Of Electronic Engineering Cheng Shiu University
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概要
関連著者
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Chen Chin-hsiang
Department Of Electronic Engineering Cheng Shiu University
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Chang Shoou-jinn
Institute Of Electro-optical Science And Engineering Center For Micro/nano Science And Technology Na
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Tsai Yu-Hsuan
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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Cheng Chung-Fu
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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Tsai Chia-Ming
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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CHEN Chin-Hsiang
Department of Electronic Engineering, Cheng Shiu University
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Su Yan-kuin
Institute Of Electro-optical Science And Engineering Advance Optoelectronics Technology Center Natio
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Chen Chin-Hsiang
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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Yen Shuo-Fu
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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Su Peng-Yin
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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Tsai Sung-Yi
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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Chin-Hsiang Chen
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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Hsiu-Ju Chien
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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Sung-Yi Tsai
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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Lin Wei-Chi
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 833, Taiwan, R.O.C.
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Yang Ming-Han
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 833, Taiwan, R.O.C.
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Liu Shih-Kun
Institute of Photonics and Communications, National Kaohsiung University of Applied Sciences, Kaohsiung 833, Taiwan, R.O.C.
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Tsai Chia-Ming
Department of Electronic Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 833, Taiwan, R.O.C.
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TSAI Yu-Hsuan
Department of Biomolecular Systems, Max Planck Institute of Colloids and Interfaces
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CHANG Ping-Chuan
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University
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JHOU Yi-De
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University
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LIU Chun-Hsing
Department of Electronic and Computering Engineering, Nan Jeon Institute of Technology
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HUNG Hung
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University
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Wang Shih-ming
Department Of Electronic Engineering National Yunlin University Of Science And Technology
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Chen Po-chang
Department Of Electronic And Computering Engineering Nan Jeon Institute Of Technology
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Wu Ming-hsien
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
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Chen Chin‐hsiang
Department Of Electronic Engineering Cheng Shiu University
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Wang Kuo-Run
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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Kuo-Ren Wang
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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Chen Chin-Hsiang
Department of Electronic Engineering, Cheng-Shiu Institute of Technology, No. 840, Sheng Ching Road, Kaohsiung, Taiwan 833, R.O.C.
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Tsai Cheng-Nan
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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Wang Kuo-Ren
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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San-Lein Wu
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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Chen Po-Chang
Department of Electronic and Computering Engineering, Nan Jeon Institute of Technology, Yan-Hsui, Taiwan 737, R.O.C.
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Chang Shoou-Jinn
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
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Chang Shoou-Jinn
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan 70101, R.O.C.
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Shoou-Jinn Chang
Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
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Jhou Yi-De
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
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Wang Shih-Ming
Department of Electronic Engineering, National Yunlin University of Science and Technology, R.O.C.
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Chang Ping-Chuan
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
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Ming-Hsien Wu
Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
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Liu Chun-Hsing
Department of Electronic and Computering Engineering, Nan Jeon Institute of Technology, Yan-Hsui, Taiwan 737, R.O.C.
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Chen Chin-Hsiang
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 833, Taiwan, R.O.C.
著作論文
- Self-Organized InGaN Nanodots Grown by Metal-Organic Chemical Vapor Deposition System
- High-Efficiency Electrophosphorescence Red Organic Light-Emitting Diodes Using a Thin 1,3-Bis[2-(2,2$'$-bipyridin-6-yl)-1,3,4-oxadiazol-5-yl]benzene Cleaving Layer in an Ir-Complex-Doped Emitter Layer
- GaN-Based Metal--Semiconductor--Metal Ultraviolet Photodetectors with the ZrO2 Insulating Layer
- Quaternary AlInGaN Solar Blind UV Detectors with Photo-CVD SiO_2 Cap Layers
- Organic Light-Emitting Diodes with Carrier Balance Structures
- AlInGaN 310nm Ultraviolet Metal-Insulator-Semiconductor Sensors with Photo-Chemical-Vapor-Deposition SiO_2 Cap Layers
- AlGaN Metal–Semiconductor–Metal Photodetectors with Low-Temperature AlN Cap Layer and Recessed Electrodes
- GaN Ultraviolet Schottky Barrier Photodetectors with ZrO_2 or SiO_2 Insulators
- Nitride-Based Metal–Semiconductor–Metal Photodetectors with InN/GaN Multiple Nucleation Layers
- GaN-Based Metal--Insulator--Semiconductor Ultraviolet Photodetectors with CsF Current-Suppressing Layer
- InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO2 Layers
- GaN-Based Metal--Insulator--Semiconductor Ultraviolet Sensors with CsF Insulating Layer
- GaN-Based Metal-Insulator-Semiconductor Ultraviolet Sensors with CsF Insulating Layer (Special Issue : Recent Advances in Nitride Semiconductors)
- GaN-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors with HfO₂ Insulators (Special Issue : Recent Advances in Nitride Semiconductors)
- High-Indium-Content InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes