Nitride-Based Metal–Semiconductor–Metal Photodetectors with InN/GaN Multiple Nucleation Layers
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概要
- 論文の詳細を見る
GaN metal–semiconductor–metal (MSM) photodetectors with InN/GaN multiple nucleation layers were proposed and fabricated. We achieved a much smaller dark current and a larger photocurrent-to-dark current ratio from the proposed device with InN/GaN multiple nucleation layers than that from the GaN MSM photodetector with conventional single low-temperature GaN nucleation layer. We also achieved a much larger UV-to-visible spectral response ratio of photoresponse at 360–450 nm from the photodetector with InN/GaN multiple nucleation layers. Furthermore, we also found that we can significantly reduce noise current density using these InN/GaN multiple nucleation layers.
- 2010-04-25
著者
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Chen Chin-hsiang
Department Of Electronic Engineering Cheng Shiu University
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Kuo-Ren Wang
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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Tsai Sung-Yi
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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Chin-Hsiang Chen
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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Wang Kuo-Ren
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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Hsiu-Ju Chien
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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San-Lein Wu
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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Sung-Yi Tsai
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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