GaN-Based Metal--Insulator--Semiconductor Ultraviolet Sensors with CsF Insulating Layer

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概要

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• Nitride-based metal--insulator--semiconductor (MIS) ultraviolet (UV) photodetectors (PDs) with a CsF insulating layer were proposed and fabricated. The dark current was considerably reduced and the UV-to-visible contrast ratio was enhanced by inserting the CsF insulating layer. The noise-equivalent powers (NEPs) were 9.05\times 10^{-10}, 1.27\times 10^{-9}, and 2.4\times 10^{-9} W, and the normalized detectivity (D^{*}) values were 7.5\times 10^{7}, 5.35\times 10^{7}, and 2.83\times 10^{7} cm Hz^0.5W^-1for the PD with a 5-nm-thick CsF layer, the PD with a 50-nm-thick CsF layer, and the PD with a 100-nm-thick CsF, respectively, when biased at 1 V.

• 2013-08-25

著者

• Chen Chin-hsiang

  Department Of Electronic Engineering Cheng Shiu University

• Tsai Chia-Ming

  Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.

• Lin Wei-Chi

  Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 833, Taiwan, R.O.C.

• Chen Chin-Hsiang

  Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 833, Taiwan, R.O.C.

• Yang Ming-Han

  Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 833, Taiwan, R.O.C.

• Liu Shih-Kun

  Institute of Photonics and Communications, National Kaohsiung University of Applied Sciences, Kaohsiung 833, Taiwan, R.O.C.

• Tsai Chia-Ming

  Department of Electronic Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 833, Taiwan, R.O.C.

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