Tsai Chia-Ming | Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
スポンサーリンク
概要
- Tsai Chia-Mingの詳細を見る
- 同名の論文著者
- Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.の論文著者
関連著者
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Chen Chin-hsiang
Department Of Electronic Engineering Cheng Shiu University
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Tsai Chia-Ming
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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Lin Wei-Chi
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 833, Taiwan, R.O.C.
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Yang Ming-Han
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 833, Taiwan, R.O.C.
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Liu Shih-Kun
Institute of Photonics and Communications, National Kaohsiung University of Applied Sciences, Kaohsiung 833, Taiwan, R.O.C.
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Tsai Chia-Ming
Department of Electronic Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung 833, Taiwan, R.O.C.
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Chen Chin-Hsiang
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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Tsai Yu-Hsuan
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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Tsai Cheng-Nan
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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Yen Shuo-Fu
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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Su Peng-Yin
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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Cheng Chung-Fu
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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Chen Chin-Hsiang
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 833, Taiwan, R.O.C.
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TSAI Yu-Hsuan
Department of Biomolecular Systems, Max Planck Institute of Colloids and Interfaces
著作論文
- GaN-Based Metal--Insulator--Semiconductor Ultraviolet Photodetectors with CsF Current-Suppressing Layer
- GaN-Based Metal--Insulator--Semiconductor Ultraviolet Sensors with CsF Insulating Layer
- GaN-Based Metal-Insulator-Semiconductor Ultraviolet Sensors with CsF Insulating Layer (Special Issue : Recent Advances in Nitride Semiconductors)