AlGaN Metal–Semiconductor–Metal Photodetectors with Low-Temperature AlN Cap Layer and Recessed Electrodes
スポンサーリンク
概要
- 論文の詳細を見る
Al0.16Ga0.84N 320 nm near-solar-blind ultraviolet (UV) metal–semiconductor–metal photodetectors (MSM-PDs) with a low-temperature AlN (LT-AlN) layer and inductively coupled plasma (ICP) recessed electrodes were successfully fabricated. Compared with the conventional MSM-PDs, it was found that the measured photocurrent was much larger for the MSM-PD with the LT-AlN layer and ICP recessed electrodes. The responsivity of the MSM-PD with the LT-AlN layer and ICP recessed electrodes was also found to be larger, which could be attributed to the ICP-etching-induced photoconductive gain.
- 2010-04-25
著者
-
Chang Shoou-jinn
Institute Of Electro-optical Science And Engineering Center For Micro/nano Science And Technology Na
-
Wu Ming-hsien
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
-
Chen Chin-hsiang
Department Of Electronic Engineering Cheng Shiu University
-
Chin-Hsiang Chen
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
-
Hsiu-Ju Chien
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
-
Sung-Yi Tsai
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
-
Shoou-Jinn Chang
Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
-
Ming-Hsien Wu
Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
関連論文
- Two-Step Etching Mechanism of Ag-Si Nanostructure with Various Ag Nanoshape Depositions
- High Brightness InGaN/GaN LEDs with ESD Protection
- High Temperature and Low Frequency Noise of AlGaN/GaN/AlGaN Double Heterostructure MOS-HFETs with Photo-Chemical Vapor Deposition SiO_2 Layer
- Transparent TiN Electrodes in GaN Metal-Semiconductor-Metal Ultraviolet Photodetectors(Semiconductors)
- P-Down InGaN/GaN Multiple Quantum Wells Light-Emitting Diode Structure Grown by Metal-Organic Vapor-Phase Epitaxy
- On the Carrier Concentration and Hall Mobility in GaN Epilayers : Semiconductors
- Self-Organized InGaN Nanodots Grown by Metal-Organic Chemical Vapor Deposition System
- Noise Analysis of Nitride-based MOS-HFETs with Photo-chemical Vapor Deposition SiO_2 Gate Oxide in the Linear and Saturation Region
- Homoepitaxial ZnSe MIS Photodetectors Using SiO_2 and BST Insulator
- Improved Performance of 2, 3-Dibutoxy-1, 4-Phenylene Vinylene Based Polymer Light-Emitting Diodes by Thermal Annealing
- ZnMgSSe Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes : Semiconductors
- Impact of Reducing Shallow Trench Isolation Mechanical Stress on Active Length for 40 nm n-Type Metal--Oxide--Semiconductor Field-Effect Transistors
- High-Efficiency Electrophosphorescence Red Organic Light-Emitting Diodes Using a Thin 1,3-Bis[2-(2,2$'$-bipyridin-6-yl)-1,3,4-oxadiazol-5-yl]benzene Cleaving Layer in an Ir-Complex-Doped Emitter Layer
- AlGaN Ultraviolet Metal-Semiconductor-Metal Photodetectors with Low-Temperature-Grown Cap Layers
- Investigation of Stress Memorization Process on Low-Frequency Noise Performance for Strained Si n-Type Metal--Oxide--Semiconductor Field-Effect Transistors
- Practical Passive Filter Synthesis Using Genetic Programming(CAD, Analog Circuit and Device Technologies)
- A Novel Fabrication of p--n Diode Based on ZnO Nanowire/p-NiO Heterojunction
- GaN-Based Metal--Semiconductor--Metal Ultraviolet Photodetectors with the ZrO2 Insulating Layer
- Quaternary AlInGaN Solar Blind UV Detectors with Photo-CVD SiO_2 Cap Layers
- Crystal Polarity Effects on Magnesium Implantation into GaN Layer
- Effects of Phosphorus Implantation on the Activation of Magnesium Doped in GaN
- Organic Light-Emitting Diodes with Carrier Balance Structures
- ZnO Nanowire-Based CO Sensors Prepared at Various Temperatures
- Investigation of Impact Ionization in Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
- The Bias-Crystallization Mechanism on Structural Characteristics and Electrical Properties of Zn-In-Sn-O Film
- AlInGaN 310nm Ultraviolet Metal-Insulator-Semiconductor Sensors with Photo-Chemical-Vapor-Deposition SiO_2 Cap Layers
- AlGaN Metal–Semiconductor–Metal Photodetectors with Low-Temperature AlN Cap Layer and Recessed Electrodes
- The Output Power Enhancements of GaN-Based Blue Light-Emitting Diodes with Highly Reflective Ag/Cr/Au Trilayer Omnidirectional Reflective Electrode Pads
- GaN Ultraviolet Schottky Barrier Photodetectors with ZrO_2 or SiO_2 Insulators
- Nitride-Based Metal–Semiconductor–Metal Photodetectors with InN/GaN Multiple Nucleation Layers
- Efficiency Droop Characteristics in InGaN-Based Near Ultraviolet-to-Blue Light-Emitting Diodes
- Reduction in Turn-on Voltage in GaInNAs and InGaAs-Based Double-Heterojunction Bipolar Transistors
- InGaN Metal–Semiconductor–Metal Photodiodes with Nanostructures
- Microstructural Characteristics of InGaZnO Thin Film : Using an Electrical Current Method
- GaN Schottky Barrier Photodetectors with a \beta-Ga2O3 Cap Layer
- GaN-Based Metal--Insulator--Semiconductor Ultraviolet Photodetectors with CsF Current-Suppressing Layer
- AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Low-Temperature-Grown Cap Layers
- n-UV+Blue/Green/Red White Light Emitting Diode Lamps
- Impact of Ge Content on Flicker Noise Behavior of Strained-SiGe p-Type Metal–Oxide–Semiconductor Field-Effect Transistors
- Study of Enhanced Impact Ionization in Strained-SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
- High Temperature Performance and Low Frequency Noise Characteristics of AlGaN/GaN/AlGaN Double Heterostructure Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors with Photochemical Vapor Deposition SiO2 Layer
- Improvement of High-Speed Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
- Effect of Substrate Properties on Luminescence of White ZnGa2O4 Phosphor
- Indium–Tin-Oxide Metal–Insulator–Semiconductor GaN Ultraviolet Photodetectors Using Liquid-Phase-Deposition Oxide
- Nitride based Power Chip with Indium-Tin-Oxide p-Contact and Al Back-Side Reflector
- InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts
- AlGaN/GaN Modulation-Doped Field-Effect Transistors with An Mg-doped Carrier Confinement Layer
- Noise Analysis of Nitride-Based Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors with Photo-Chemical Vapor Deposition SiO2 Gate Oxide in the Linear and Saturation Regions
- High-Responsivity InGaAs/InP Quantum-Well Infrared Photodetectors Prepared by Metal Organic Chemical Vapor Deposition
- Optoelectronic Properties of Thermally Evaporated ZnO Films with Nanowalls on Glass Substrates
- High Optical-Gain AlGaN/GaN 2 Dimensional Electron Gas Photodetectors
- InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO2 Layers
- Characterization of Oxide Traps in 28 nm n-Type Metal--Oxide--Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise
- GaN-Based Metal--Insulator--Semiconductor Ultraviolet Sensors with CsF Insulating Layer
- GaN-Based Light Emitting Diodes with Si-Doped In0.23Ga0.77N/GaN Short Period Superlattice Current Spreading Layer
- GaN Schottky Barrier Photodetectors with a β-Ga_2O_3 Cap Layer
- GaN-Based Metal-Insulator-Semiconductor Ultraviolet Sensors with CsF Insulating Layer (Special Issue : Recent Advances in Nitride Semiconductors)
- GaN-Based Metal-Insulator-Semiconductor Ultraviolet Photodetectors with HfO₂ Insulators (Special Issue : Recent Advances in Nitride Semiconductors)
- Characterization of Oxide Traps in 28 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise (Special Issue : Solid State Devices and Materials)
- High-Indium-Content InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes
- Optoelectronic Properties of Thermally Evaporated ZnO Films with Nanowalls on Glass Substrates