Characterization of Oxide Traps in 28 nm n-Type Metal--Oxide--Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise

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概要

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• In this study, the effect of uniaxial tensile on the SiO<inf>2</inf>/Si interface of the 28 nm n-type metal--oxide--semiconductor field-effect transistors (nMOSFETs) has been investigated. nMOSFETs were fabricated with different thicknesses of the stress-memorization technique (SMT) films to further increase channel stress because the SMT films can provide a higher uniaxial tensile to the channel. Trap behaviors such as activation energy and depth were characterized on the basis of drain current random telegraph noise (RTN). By RTN analyses, we found that the trap energy level is closer to the channel conduction band as the tensile strain in the channel increases higher, resulting in the trap being located close to the SiO<inf>2</inf>/Si interface.

• 2013-04-25

著者

• Wu San-lein

  Department Of Electronic Engineering Cheng Shiu University

• Chang Shoou-jinn

  Institute Of Electro-optical Science And Engineering Center For Micro/nano Science And Technology Na

• Huang Po-chin

  Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit

• Wu Chung-Yi

  Department of Electronic Engineering, Cheng Shiu University, Niaosong, Kaohsiung 833, Taiwan

• Cheng Osbert

  Central R&D Division, United Microelectronics Corporation (UMC), Hsinchu 30077, Taiwan, R.O.C.

• Wu San-Lein

  Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 833, Taiwan

• Huang Po-Chin

  Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan

• Wang Bo-Chin

  Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 701, Taiwan

• Lu Yu-Ying

  Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 833, Taiwan

• Huang Chien-Wei

  Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 833, Taiwan

• Lin Yu-Min

  Central R&D Division, United Microelectronics Corporation (UMC), Tainan 744, Taiwan

• Lee Kun-Hsien

  Central R&D Division, United Microelectronics Corporation (UMC), Tainan 744, Taiwan

• Lin Yu-Min

  Central R&D Division, United Microelectronics Corporation (UMC), Tainan 744, Taiwan

• Wu Chung-Yi

  Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 833, Taiwan

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