Investigation of Trap Properties in High-k/Metal Gate p-Type Metal--Oxide--Semiconductor Field-Effect Transistors with SiGe Source/Drain Using Random Telegraph Noise Analysis

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概要

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• The random telegraph noise (RTN) characteristics of high-k/metal gate (HK/MG) p-type metal--oxide--semiconductor field-effect transistors (pMOSFETs) with SiGe source/drain (SiGe S/D) have been investigated. Trap parameters of HK/MG pMOSFETs with uniaxial strain, such as capture time and emission time, activation energies for capture and emission, trap energy level, and its location in gate dielectric are determined to establish the configuration coordinate diagram for the first time. RTN results showed that HK/MG devices with SiGe S/D undergo high compressive strain, and the trap position (x_{\text{T}}) from the interfacial layer (IL)-SiO<inf>2</inf>/Si interface is reduced because of the closer trap energy level near the valence band of silicon.

• 2013-08-25

著者

• Wu San-lein

  Department Of Electronic Engineering Cheng Shiu University

• Wu San-Lein

  Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 83347, Taiwan

• Tsai Kai-Shiang

  Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 83347, Taiwan

• Cheng Osbert

  Advance Technology Development, United Microelectronics Corporation (UMC), Tainan 74145, Taiwan

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• Investigation of Impact Ionization in Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
• Analysis of Electron Tunneling Components in p+ Poly-Gate p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors from Direct Tunneling Region to Fowler–Nordheim Region
• GaN Schottky Barrier Photodetectors with a \beta-Ga2O3 Cap Layer
• Impact of Ge Content on Flicker Noise Behavior of Strained-SiGe p-Type Metal–Oxide–Semiconductor Field-Effect Transistors
• Study of Enhanced Impact Ionization in Strained-SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
• Characterization of Oxide Traps in 28 nm n-Type Metal--Oxide--Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise
• Investigation of Trap Properties in High-k/Metal Gate p-Type Metal--Oxide--Semiconductor Field-Effect Transistors with SiGe Source/Drain Using Random Telegraph Noise Analysis
• GaN Schottky Barrier Photodetectors with a β-Ga_2O_3 Cap Layer
• Investigation of Trap Properties in High-k/Metal Gate p-Type Metal--Oxide--Semiconductor Field-Effect Transistors with SiGe Source/Drain Using Random Telegraph Noise Analysis
• Characterization of Oxide Traps in 28 nm n-Type Metal-Oxide-Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise (Special Issue : Solid State Devices and Materials)
• Defect properties of high-k/metal-gate metal–oxide–semiconductor field-effect transistors determined by characterization of random telegraph noise

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