Sung-Yi Tsai | Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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概要
- Sung-Yi Tsai の詳細を見る
- 同名の論文著者
- Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.の論文著者
関連著者
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Chen Chin-hsiang
Department Of Electronic Engineering Cheng Shiu University
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Chin-Hsiang Chen
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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Hsiu-Ju Chien
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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Sung-Yi Tsai
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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Chang Shoou-jinn
Institute Of Electro-optical Science And Engineering Center For Micro/nano Science And Technology Na
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Wu Ming-hsien
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
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Kuo-Ren Wang
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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Tsai Sung-Yi
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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Wang Kuo-Ren
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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San-Lein Wu
Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.
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Shoou-Jinn Chang
Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
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Ming-Hsien Wu
Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
著作論文
- AlGaN Metal–Semiconductor–Metal Photodetectors with Low-Temperature AlN Cap Layer and Recessed Electrodes
- Nitride-Based Metal–Semiconductor–Metal Photodetectors with InN/GaN Multiple Nucleation Layers