Investigation of Transport Mechanism for Strained Si n Metal–Oxide–Semiconductor Field-Effect Transistor Grown on Multi-Layer Substrate
スポンサーリンク
概要
- 論文の詳細を見る
Tensile strained-Si n metal–oxide–semiconductor field-effect transistors (MOSFETs) grown on a novel multi-layer substrate are studied for Si-cap layer thicknesses ranging from 3 to 13 nm. A Si0.72Ge0.28/Si/Si0.7Ge0.3/bulk-Si multi-layer structure is used to confine threading dislocation formation around the bottom Si0.7Ge0.3 layer and reduce the top SiGe buffer thickness with the low-defect surface. We show that sample with 8-nm-thickness Si cap exhibits comparable subthreshold characteristics to conventional Si control, and provides a 12% higher drive current for devices down to 0.24 μm. Although an even lager current enhancement (up to 46%) was found in long-channel sample with 13 nm Si cap, observed high off-state leakage current for deep-submicron device resulting from partial strain-relief indicate that the thicker Si cap is, the larger channel length will have to completely accommodate the tensile strain of the film.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-12-10
著者
-
Wu San
Department Of Electronic Engineering Cheng Shiu University
-
Chang Shoou
Institute Of Microelectronics & Department Of Electrical Engineering Center For Micro/nano Scien
-
WANG Yen
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung Universi
-
Wu San
Department of Electronic Engineering, Cheng Shiu University, 840 Chengcing Road, Niaosong, Kaohsiung, Taiwan, R.O.C.
-
Chang Shoou
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, No. 1 Ta Hseuh Road, Tainan, Taiwan, R.O.C.
-
Wang Yen
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, No. 1 Ta Hseuh Road, Tainan, Taiwan, R.O.C.
関連論文
- A Novel Triple δ-Doped SiGe Heterostructure Field-Effect Transistor
- Device Linear Improvement Using SiGe/Si Heterostructure Delta-Doped-Channel Field-Effect Transistors
- Low Temperature Activation of Mg-Doped GaN in O_2 Ambient : Semiconductors
- Investigation of Transport Mechanism for Strained Si n Metal-Oxide-Semiconductor Field-Effect Transistor Grown on Multi-Layer Substrate
- Strained Si_Ge_x Normal-Graded Channel P-Type Metal Oxide Semiconductor Field Effect Transistor
- High-Performance Doped-Channel Field-Effect Transistor Using Graded SiGe Channel
- Investigation of Impact Ionization in Strained-Si nMOSFETs
- A New Silicon Field-Effect Transistors with Two-Hole-Transport-Mode (HTM) Channels Grown by Molecular Beam Epitaxy (MBE)
- Effects of Interfacial Oxide Layer for the Ta_2O_5 Capacitor After High-Temperature Annealing
- Surface Characteristics, Optical and Electrical Properties on Sol-Gel Synthesized Sn-Doped ZnO Thin Film
- Tolerance Design of Passive Filter Circuits Using Genetic Programming(Electronic Circuits)
- Vertical High Quality Mirrorlike Facet of GaN-Based Device by Reactive Ion Etching
- Characterization of Oxide Tarps in 28 nm p-Type Metal--Oxide--Semiconductor Field-Effect Transistors with Tip-Shaped SiGe Source/Drain Based on Random Telegraph Noise
- Impact of SiN on Performance in Novel Complementary Metal–Oxide–Semiconductor Architecture Using Substrate Strained-SiGe and Mechanical Strained-Si Technology
- P-Type Enhancement-Mode SiGe Doped-Channel Field-Effect Transistor
- Effect of Annealing Process on Trap Properties in High-k/Metal Gate n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors through Low-Frequency Noise and Random Telegraph Noise Characterization
- Evaluation of Interface Property and DC Characteristics Enhancement in Nanoscale n-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Using Stress Memorization Technique
- Hole Confinement and $1/ f$ Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal–Oxide–Semiconductor Field-Effect Transistors
- Optimized Si-Cap Layer Thickness for Tensile-Strained-Si/ Compressively Strained SiGe Dual-Channel Transistors in 0.13 μm Complementary Metal Oxide Semiconductor Technology
- Investigation of Transport Mechanism for Strained Si n Metal–Oxide–Semiconductor Field-Effect Transistor Grown on Multi-Layer Substrate