Realization of Abrupt Interfaces in Si/Ge Superlattices by Suppressing Ge Surface Segregation with Submonolayer of Sb
スポンサーリンク
概要
- 論文の詳細を見る
Atomic mixing in Si/Ge strained-layer superlattices is investigated by means of SIMS and XPS. The interfacial mixing is attributed to the surface segregation of Ge atoms during MBE growth of Si overlayers. It is demonstrated that the surface segregation is remarkably suppressed by depositing submonolayer Sb atoms on Ge layers prior to Si overgrowth and that Ge layers are confined to within 0.8 nm.
- 社団法人応用物理学会の論文
- 1990-11-20
著者
-
Fujita K
Oki Electric Industry Co. Ltd. Tokyo
-
SHIRAKI Yasuhiro
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo
-
Fujita K
Department Of Material Chemistry Graduate School Of Engineering Kyoto University
-
FUKATSU Susumu
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo
-
Fukatsu Shigeto
Department Of Applied Physics And Physico-informatics And Crest-jst Keio University
-
YAGUCHI Hiroyuki
Research Center for Advanced Science and Technology, The University of Tokyo
-
ITO Ryoichi
Research Center for Advanced Science and Technology, The University of Tokyo
-
Igarashi T
Research And Development Center Ushio Inc.
-
Yaguchi H
Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saita
-
Yaguchi Hiroyuki
Research Center For Advanced Science And Technology University Of Tokyo
-
Fukatsu S
Univ. Tokyo Tokyo Jpn
-
Fujita K
Univ. Tokyo Tokyo Jpn
-
Fukatsu Susumu
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo:(present Address
-
FUJITA Ken
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo
-
IGARASHI Takayuki
Research Center for Advanced Science and Technology, The University of Tokyo
-
Shiraki Yasuhiro
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
-
IGARASHI Takayuki
Research and Development Center, USHIO Inc.
関連論文
- P-Type Enhancement-Mode SiGe Doped-Channel Field-Effect Transistor
- A Novel Triple δ-Doped SiGe Heterostructure Field-Effect Transistor
- Fabrication of Periodically Domain-Inverted AlGaAs Quasi-Phase-Matched Devices by GaAs/Ge/GaAs Sublattice Reversal Epitaxy
- Sublattice Reversal in GaAs/Si/GaAs (100) Heterostructures by Molecular Beam Epitaxy
- 19 GROWTH HORMONE-RELEASING HORMONE (GHRH) RECEPTOR MUTATION THAT ACTS AS A DOMINANT NEGATIVE.
- 34 NOVEL MUTATIONS IN THE CYP11B1 GENE IN JAPANESEPATIENTS WITH CONGENITAL ADRENAL HYPERPLASIA DUE TO 11β-HYDROXYIASE DEFICIENCY
- Strain Effects of Ge Islands on Si_Ge_x/Si Quantum Well
- Hydrothermal Synthesis and Magnetic Properties of Zinc Ferrite Nanocrystals
- 12-P-08 High Magnetization and Cluster Glass Behavior of Zine Ferrite Thin Film Prepared by a Sputtering Method
- 12-O-25 Fluorescence Properties of Er^-Doped YAG Nano-Crystals Synthesized by Glycothermal Method
- First Observation of Faraday Effct of EuS Nanocrystals in Polymer Thin Films
- Triboluminescence of (Sr,Ba)Al_2O_4 Polycrystals Doped with Eu^ and Eu^
- Persistent Spectral Hole Burning of Eu_ Ions Silicate Glasses
- Growth Mechanism in the Metalorganic Vapor Phase Epitaxy of Metastable GaP_N_x Alloys: A Growth Interruption Study
- Arsenic Surfactant and Incorporation Effects on Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy
- Metalorganic Vapor Phase Epitaxy Growth of High Quality Cubic GaN on GaAs (100) Substrates
- High Quality Cubic GaN Growth on GaAs (100) Substrates by Metalorganic Vapor Phase Epitaxy
- Crystal Structure of GaN Grown on 3C-SiC Substrates by Metalorganic Vapor Phase Epitaxy
- Ordered Structure in Alloy Grains of Iron-Nickel Produced by the Gas Evaporation Technique
- Electron-Beam-Induced Selective Thermal Decomposition of Ultrathin SiO_2 Layers Used in Nanofabrication
- Second-Harmonic Generation from GaP/AlP Multilayers on GaP(111)Substrates Based on Quasi-Phase Matching for the Fundamental Standing Wave
- New Semiconductor Second-Harmonic Generator Based on Quasi-Phase-Matching for Cavity-Enhanced Fundamental Standing Wave
- Effect of Si/SiO_2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO_2
- Fast Lateral Transport of Excitons in a GaAs/AlGaAs Quantum Well
- Silicon Precipitation Induced by Argon Excimer Laser in Surface Layers of Si_3N_4
- High-Temperature Metalorganic Vapor Phase Epitaxial Growth of GaAs/AlGaAs Quantum Structures in Tetrahedral-Shaped Recesses on GaAs (111) B Substrates
- Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire-Like Lasers
- GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by Metalorganic Vapor Phase Epitaxy
- Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire Lasers
- GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by MOVPE
- Metalorganic Vapor Phase Eitaxy Growth Features of AlGaAs in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates ( Quantum Dot Structures)
- Rectangular AlGaAs/AlAs Quantum Wires Using Spontaneous Vertical Quantum Wells
- The in Situ Growth of Lateral Confinement Enhanced Rectangular AlGaAs/AlAs Quantum Wires by Utilizing the Spontaneous Vertical Quantum Wells
- Formation of Cubic GaN on (111)B GaAs by Metal-Organic Vapor-Phase Epitaxy with Dimethylhydrazine
- Photoreflectance Study of Interface Roughness in Ge/SiGe Strained-Layer Heterostructures
- Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy
- Transmission Electron Microscope Observation of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy with Dimethylhydrazine on (001) GaAs
- GaAsP Layers Grown on (111)-Oriented GaAs Substrates by Metalorganic Vapor Phase Epitaxy
- Metal-Organic Vapor Phase Epitaxy Growth and Optical Study of GaAs/GaAs_P_x Strained-Barrier Single Quantum Well Structures
- Development of Thin SiGe Relaxed Layers with High-Ge Composition by Ion Implantation Method and Application to Strained Ge Channels
- On Effects of Gate Bias on Hole Effective Mass and Mobility in Strained-Ge Channel Structures
- Thickness Dependence of Strain Field Distribution in SiGe Relaxed Buffer Layers
- Strain-Field Evaluation of Strain-Relaxed Thin SiGe Layers Fabricated by Ion Implantation Method
- Optical Detection of Interdiffusion in Strained Si_Ge_x/Si Quantum Well Structures
- Photoluminescence of Si_Ge_x/Si Quantum Welts with Abrupt Interfaces Formed by Segregant-Assisted Growth
- Band-Edge Photoluminescence of SiGe/Strained-Si/SiGe Type-II Quantum Wells on Si(100)
- Luminescence from Strained Si_Ge_x/Si Quantum Wells Grown by Si Molecular Beam Epitaxy
- Photogeneration and Transport of Carriers in Strained Si_Ge_x/Si Quantum Well Structures
- Quantum Size Effect of Excitonic Band-Edge Luminescence in Strained Si_Ge_x/Si Single Quantum Well Structures Grown by Gas-Source Si Molecular Beam Epitaxy
- Band-Edge Luminescence of Strained Si_xGe_/Si Single Quantum Well Structures Grown on Si(111) by Si Molecular Beam Epitaxy
- Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy
- Growth of PbSe and PbTe Ultrafine Particles by Gas Evaporation Method
- A New Preparation Method of Ultrafine Particles of Metallic Sulfides
- Measurements of the Depth Profile of the Refractive Indices in Oxide Films on SiC by Spectroscopic Ellipsometry
- The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO_2
- Channel Width Dependence of Mobility in Ge Channel Modulation-Doped Structures
- Si/1ML-Ge/Si(001) Interface Structure Characterized by Surface X-Ray Diffraction and X-Ray Standing-Wave Method
- Characterization of Oxide Films on SiC by Spectroscopic Ellipsometry
- Photoreflectance Study of GaAs/GaAsP Strained-Barrier Quantum Well Structures
- Dependence of Band Offsets on Elastic Strain in GaAs/GaAs_P_x Strained-Layer Single Quantum Wells
- Compositional Latching in GaAs_P_x/GaAs Metalorganic Vapor Phase Epitaxy
- Layer-by-Layer Oxidation of Si(001) Surfaces
- MBE-Related Surface Fegregation of Dopant Atoms in Silicon : Condensed Matter
- Device Linear Improvement Using SiGe/Si Heterostructure Delta-Doped-Channel Field-Effect Transistors
- Quantitative Evaluation of Silicon Displacement Induced by Arsenic Implantation Using Silicon Isotope Superlattices
- Strain Relaxation and Surface Morphology of Ultrathin High Ge Content SiGe Buffers Grown on Si(001) Substrate
- Fabrication of InGaAs Vertical-Cavity Surface-Emitting Laser by Molecular Beam Epitaxy and Its Room-Temperature Operation on (411)A GaAs Substrates
- Mobility Enhancement in Strained Ge Heterostructures by Planarization of SiGe Buffer Layers Grown on Si Substrates
- Photoluminescence of Erbium Implanted in SiGe
- Optical Constants of Cubic GaN, AlN, and AlGaN Alloys
- Fabrication of GaAs Ultrafine Gratings by Single-Layer-Masked SiCl_4 Reactive Ion Etching
- Disappearance of the Breakdown of Quantum Hall Effects in Short Devices
- Optical Properties of Excitons in Semiconductor Quantum Wells
- Oscillator Strength of Excitons in InGaAs/GaAs Quantum Wells
- Nonlinear Optical Coefficient of AlAs Thin Film on GaAs Substrate
- Deposition of SiO_2 Films on Strained SiGe Layer by Direct Photo Chemical Vapor Deposition
- Step Edge Structures on Si(112) and (113) Surfaces Treated in NH_4F Solution
- Strain Relaxation in MBE-Grown Si_Ge_x/Si(100) Heterostructures by Annealing
- Realization of Abrupt Interfaces in Si/Ge Superlattices by Suppressing Ge Surface Segregation with Submonolayer of Sb
- A Kinetic Model of Silicon Carbide Oxidation Based on the Interfacial Silicon and Carbon Emission Phenomenon
- Simultaneous Determination of Carrier Concentration, Mobility, and Thickness of SiC Homoepilayers by Infrared Reflectance Spectroscopy
- Temperature Dependence of Excitonic $\Gamma_{\text{c}}$–$\Gamma_{\text{v}}$ Transition Energies of GaxIn1-xP Crystals
- The Γ_c-Γ_v Transition Energies of Al_xIn_P Alloys
- Reaction Studies between Fluorocarbon Films and Si Using Temperature-Programmed X-Ray Photoelectron and Desorption Spectroscopies
- X-Ray Photoelectron Spectroscopic Studies on Pyrolysis of Plasma-Polymerized Fluorocarbon Films on Si
- Thermal Desorption Spectroscopy and X-Ray Photoelectron Spectroscopy Study of CF_x Layer Deposited on Si and Si0_2
- A New Photo-Material Processing Using Incoherent Vacuum Ultraviolet Radiation
- Built-in Electric Field Strength in InP/n^+-InP Determined by Photoellipsometry and Photoreflectance
- Organic Devices Prepared by Evaporative Spray Deposition from Ultra-dilute Solution
- Novel Method for Polymer Thin Film Preparation : Spray Deposition of Highly Diluted Polymer Solutions : Atoms, Molecules, and Chemical Physics
- Well Width Dependence of the Exciton Phonon Interaction in Semiconductor Quantum Wells
- Acceptorlike Behavior of Defects in SiGe Alloys Grown by Molecular Beam Epitaxy
- Line Width Dependence of Anisotropic Strain State in SiGe Films Induced by Selective Ion Implantation
- Room-Temperature Observation of Size Effects in Photoluminescence of Si.Ge./Si Nanocolumns Prepared by Neutral Beam Etching
- Formation of Tensilely Strained Germanium-on-Insulator
- Acceptor-Like States in SiGe Alloy Related to Point Defects Induced by Si Ion Implantation
- Room-Temperature Electroluminescence from Ge Quantum Dots Embedded in Photonic Crystal Microcavities
- High-Quality-Factor Light-Emitting Diodes with Modified Photonic Crystal Nanocavities Including Ge Self-Assembled Quantum Dots on Silicon-On-Insulator Substrates
- The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO2
- Effect of Si/SiO2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO2