Step Edge Structures on Si(112) and (113) Surfaces Treated in NH_4F Solution
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概要
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Step edge structures on H-terminated Si (112) and (113) surfaces have been investigated with infrared absorption spectroscopy. NH_4F acid is used to prepare almost straight bilayer step edges on the surfaces. It has been found that the step edges with the dihydride fluctuate within the width of one row of Si-H oscillators. The reason for the fluctuation is attributed to the etching of 81 atoms of straight step edges during NH_4F treatment. The assignment of C mode absorption has been refined based on our experimental result. Therein, the surface orientation dependence of the absorption spectra is quantitatively investigated by taking account of the effect of step fluctuation. The ratio of actually fluctuating step edges to original step edges is estimated.
- 社団法人応用物理学会の論文
- 1994-01-30
著者
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Fujita K
Oki Electric Industry Co. Ltd. Tokyo
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Fujita K
Department Of Material Chemistry Graduate School Of Engineering Kyoto University
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Hirashita Norio
Vlsi Research And Development Center Oki Electric Industry Co. Ltd.
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Hirashita Norio
Vlsi R&d Center Oki Electric Industry Co. Ltd.
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Fujita K
Univ. Tokyo Tokyo Jpn
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FUJITA Ken
VLSI Research and Development Center, Oki Electric Industry Co., Ltd.
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Fujita Ken
Vlsi Research And Development Center Oki Electric Industry Co. Ltd.
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