Mechanisms of Surface Reaction in Fluorocarbon Dry Etching of Silicon Dioxide : An Effect of Thermal Excitation
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-06-30
著者
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IKEGAMI Naokatsu
VLSI R〓D Center, Oki Electric Industry Co., Ltd.
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Hirashita N
Oki Electric Industry Co. Ltd. Vlsi R&d Center
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Hirashita Norio
Vlsi Research And Development Center Oki Electric Industry Co. Ltd.
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Hirashita Norio
Vlsi R&d Center Oki Electric Industry Co. Ltd.
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KANAMORI Jun
VLSI R&D Center, Oki Electric Industry Co., Ltd.
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Kanamori J
Vlsi Research And Development Center Oki Electric Industry Co. Ltd.
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Kanamori Jun
Vlsi R&d Center Oki Electric Industry Co. Ltd.
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OZAWA Nobuo
VLSI R&D Center, Oki Electric Industry Co., Ltd.
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Ozawa N
Oki Electric Ind. Co. Ltd. Tokyo Jpn
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Ozawa Nobuo
Vlsi R&d Center Oki Electric Industry Co. Ltd.
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MIYAKAWA Yasuhiro
VLSI R&D Center, Electronic Devices Group, Oki Electric Industry Co., Ltd.
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Miyakawa Yasuhiro
Vlsi Research And Development Center Oki Electric Industry Co. Ltd.
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Ikegami Naokatsu
Vlsi R&d Center Oki Electric Industry Co. Ltd.
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