Ultra-High Selectivity Sidewall-Spacer Etching and Contact Hole Etching Technologies for 0.1μm FD-SOI Devices

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概要

• 論文の詳細を見る
• 2001-09-25

著者

• IKEGAMI Naokatsu

  VLSI R〓D Center, Oki Electric Industry Co., Ltd.

• Matsuhashi Hideaki

  Vlsi Research Center Oki Electric Industry Co. Ltd.

• Matsuhashi Hideaki

  Vlsi R&d Center Oki Electric Industry Co. Ltd.

• KANAMORI Jun

  VLSI R&D Center, Oki Electric Industry Co., Ltd.

• Kanamori Jun

  Vlsi R&d Center Oki Electric Industry Co. Ltd.

• Ikegami Naokatsu

  Vlsi R&d Center Oki Electric Industry Co. Ltd.

• KANAMORI Jun

  VLSI R&D Center, Oki Electric Industry Co., Ltd.

関連論文

• SiO_2 Etching Employing Inductively Coupled Plasma with Hot Inner Wall
• Ultra-High Selectivity Sidewall-Spacer Etching and Contact Hole Etching Technologies for 0.1μm FD-SOI Devices
• Optimization of Selective Epitaxy Process for Elevated Source/Drain Applicable to 0.15μm Fully Depleted CMOS on 25nm SOI
• Role of Oxygen in Poly-Si Etching by Cl_2/O_2 Plasmas
• Role of Fluorine in Reactive Ion Etching of Silicon Dioxide
• Mechanisms of Surface Reaction in Fluorocarbon Dry Etching of Silicon Dioxide : An Effect of Thermal Excitation
• Mechanisms of High PSG/SiO_2 Selective Etching in a Highly Polymerized Fluorocarbon Plasma
• Roles of Ions and Radicals in Silicon Oxide Etching : Etching and Deposition Technology
• Roles of Ions and Radicals in Silicon Oxide Etching
• Vertical Profile Control in Ultrahigh-Aspect-Ratio Contact Hole Etching with 0.05-µm-Diameter Range
• Reaction Studies between Fluorocarbon Films and Si Using Temperature-Programmed X-Ray Photoelectron and Desorption Spectroscopies
• Characteristics of Very High-Aspect-Ratio Contact Hole Etching
• Dry-Etching Mechanism of Sputtered Pb(Zr_Ti_x)O_3 Film
• Fine Contact Hole Etching in Magneto-Microwave Plasma

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