Dry-Etching Mechanism of Sputtered Pb(Zr_<1-x>Ti_x)O_3 Film

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概要

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• The Pb(Zr<1-x>Ti_x)O_3 (PZT) etching mechanism involving an ion-assisted etching reaction in a Cl_2 helicon wave plasma environment was studied in terms of the physical-bombardment-induced structrural change of the film and chemical interaction of the damaged surface with halogen. In-situ X-ray photoelectron spectroscopic analysis of a 1 ke V-Ar^+-irradiated PZT surface used in combination with Rutherford backscattering spectrometry revealed that the physical bombardment preferentially breaks Pb-O bonds, releasing Pb in the crystal which is subsequently sputtered from the surface, resulting in low Pb concentration on the surface. Thermal reaction study ato 600℃ of Cl^+-, F^+- and Ar^+-implanted PZT using X-ray diffraction indicated that the induced low Pb concentration initiates the subsequent reaction with existing halogen on the damaged surface, which is accompanied by a structural change in the film.

• 社団法人応用物理学会の論文
• 1996-04-30

著者

• Taino Mitsuhiko

  Kek High Energy Accelerator Research Organization

• IKEGAMI Naokatsu

  VLSI R〓D Center, Oki Electric Industry Co., Ltd.

• MATSUI Tetsuyuki

  Department of Physical Science, Graduate School of Engineering Science, Osaka University

• Matsui Toshiaki

  Communication Research Laboratory Ministry Of Posts And Telecommunications

• Matsui T

  Department Of Systems Innovation Graduate School Of Engineering Science Osaka University

• KANAMORI Jun

  VLSI R&D Center, Oki Electric Industry Co., Ltd.

• Kanamori J

  Vlsi Research And Development Center Oki Electric Industry Co. Ltd.

• Kanamori Jun

  Vlsi R&d Center Oki Electric Industry Co. Ltd.

• Matsui Takayuki

  Vlsi R&d Center Oki Electric Industry Co. Ltd.

• Takasaki Minoru

  Kek High Energy Accelerator Research Organization

• Ikegami Naokatsu

  Vlsi R&d Center Oki Electric Industry Co. Ltd.

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