Vertical Profile Control in Ultrahigh-Aspect-Ratio Contact Hole Etching with 0.05-µm-Diameter Range

スポンサーリンク

概要

• 論文の詳細を見る

• Vertical processing of 0.05-µm-class SiO2 holes with an aspect ratio around 20 was realized using a dipole-ring-type magnetron reactive-ion-etching system in a mixture of C4F8/O2/Ar gas. Secondary ion mass spectrometric study of the F and C concentration profiles of the polymer deposited inside the holes in the depth direction revealed that a very small amount of polymer deposition occurred in this system. This indicates that energetic species reached the hole bottoms with excellent verticality, even in an extremely fine feature. In contrast, the CHF3/CO process (tapered shape) resulted in an extremely thick polymer and carbonized region on the sidewalls, suggesting the presence of energetic species sticking to the sidewalls. The effects of energetic species impinging onto the sidewalls and the protection resulting from polymer deposition have been discussed in terms of the etched shape and F/C depth profile. Vertical incidence of the energetic species into the holes is concluded to be a significant factor in realizing a vertical profile.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1998-04-30

著者

• IKEGAMI Naokatsu

  VLSI R〓D Center, Oki Electric Industry Co., Ltd.

• Hirashita N

  Oki Electric Industry Co. Ltd. Vlsi R&d Center

• Hirashita Norio

  Vlsi Research And Development Center Oki Electric Industry Co. Ltd.

• Hirashita Norio

  Vlsi R&d Center Oki Electric Industry Co. Ltd.

• UCHIDA Hidetsugu

  VLSI R&D Center, Oki Electric Industry Co., Ltd.

• KANAMORI Jun

  VLSI R&D Center, Oki Electric Industry Co., Ltd.

• Kanamori J

  Vlsi Research And Development Center Oki Electric Industry Co. Ltd.

• Kanamori Jun

  Vlsi R&d Center Oki Electric Industry Co. Ltd.

• Yabata Atsushi

  VLSI Research and Development Center, Oki Electric Industry Co., Ltd, 550-1 Higashiasakawa, Hachioji

• Liu Guo

  VLSI Research and Development Center, Oki Electric Industry Co., Ltd, 550-1 Higashiasakawa, Hachioji

• Yabata Atsushi

  Vlsi Research And Development Center Oki Electric Industry Co. Ltd.

• Liu Guo

  Vlsi Research And Development Center Oki Electric Industry Co. Ltd.

• Ikegami Naokatsu

  Vlsi R&d Center Oki Electric Industry Co. Ltd.

• UCHIDA Hidetsugu

  VLSI R&D Center, Oki Electric Industry Co., Ltd.

• Yabata Atsushi

  VLSI R&D Center, Electronic Devices Group, Oki Electric Industry Co., Ltd

関連論文

• SiO_2 Etching Employing Inductively Coupled Plasma with Hot Inner Wall
• A Site Specification Method of Gate Oxide Breakdown Spots by a New Test Structure of MOS Capacitors(Special Issue on Microelectronic Test Structures)
• Cross-sectional Transmission Electron Microscope Studies on Intrinsic Breakdown Spots of Thin Gate Oxides
• Ultra-High Selectivity Sidewall-Spacer Etching and Contact Hole Etching Technologies for 0.1μm FD-SOI Devices
• Optimization of Selective Epitaxy Process for Elevated Source/Drain Applicable to 0.15μm Fully Depleted CMOS on 25nm SOI
• Role of Oxygen in Poly-Si Etching by Cl_2/O_2 Plasmas
• Role of Fluorine in Reactive Ion Etching of Silicon Dioxide
• Mechanisms of Surface Reaction in Fluorocarbon Dry Etching of Silicon Dioxide : An Effect of Thermal Excitation
• Mechanisms of High PSG/SiO_2 Selective Etching in a Highly Polymerized Fluorocarbon Plasma
• Roles of Ions and Radicals in Silicon Oxide Etching : Etching and Deposition Technology
• Roles of Ions and Radicals in Silicon Oxide Etching
• Step Edge Structures on Si(112) and (113) Surfaces Treated in NH_4F Solution
• Effect of Stress on Oxide Edge Shape of Local Oxidation of Silicon for Various Oxidation Temperatures
• Kinetic Analysis of the C49-to-C54 Phase Transformation in TiSi_2 Thin Films by In Situ Observation
• In Situ Observation of the C49-to-C54 Phase Transformation in TiSi_2 Thin Films by Transmission Electron Microscopy
• Vertical Profile Control in Ultrahigh-Aspect-Ratio Contact Hole Etching with 0.05-µm-Diameter Range
• Reaction Studies between Fluorocarbon Films and Si Using Temperature-Programmed X-Ray Photoelectron and Desorption Spectroscopies
• Studies of Corrosive Outgasses from Via Holes Using Thermal Desorption Spectroscopy
• X-Ray Photoelectron Spectroscopic Studies on Pyrolysis of Plasma-Polymerized Fluorocarbon Films on Si
• Thermal Desorption Spectroscopy and X-Ray Photoelectron Spectroscopy Study of CF_x Layer Deposited on Si and Si0_2
• Thermal Desorption and Infrared Studies of Plasma-Enhanced Chemical Vapor Deposited SiO Films with Tetraethyiorthosilicate
• Characteristics of Very High-Aspect-Ratio Contact Hole Etching
• Dry-Etching Mechanism of Sputtered Pb(Zr_Ti_x)O_3 Film
• 0.2 μm Hole Pattern Generation by Critical Dimension Biassing Using Resin Overcoat
• Fine Contact Hole Etching in Magneto-Microwave Plasma
• Structural Study of Single {111}-Facetted CoSi_2/Si Interface Incorporated in a Silicon-on-Insulator Metal-Oxide-Semiconductor-Field-Effect-Transistor(Semiconductors)
• Corrugated Structures on Si(110) Surfaces Treated in Ammonium Fluoride Solutions
• Desorption Kinetics of Ar Implanted into Si

もっと見る 閉じる

スポンサーリンク