Cross-sectional Transmission Electron Microscope Studies on Intrinsic Breakdown Spots of Thin Gate Oxides

スポンサーリンク

概要

著者

関連論文

A Site Specification Method of Gate Oxide Breakdown Spots by a New Test Structure of MOS Capacitors(Special Issue on Microelectronic Test Structures)
Cross-sectional Transmission Electron Microscope Studies on Intrinsic Breakdown Spots of Thin Gate Oxides
Mechanisms of Surface Reaction in Fluorocarbon Dry Etching of Silicon Dioxide : An Effect of Thermal Excitation
Step Edge Structures on Si(112) and (113) Surfaces Treated in NH_4F Solution
Effect of Stress on Oxide Edge Shape of Local Oxidation of Silicon for Various Oxidation Temperatures
Kinetic Analysis of the C49-to-C54 Phase Transformation in TiSi_2 Thin Films by In Situ Observation
In Situ Observation of the C49-to-C54 Phase Transformation in TiSi_2 Thin Films by Transmission Electron Microscopy
Vertical Profile Control in Ultrahigh-Aspect-Ratio Contact Hole Etching with 0.05-µm-Diameter Range
Reaction Studies between Fluorocarbon Films and Si Using Temperature-Programmed X-Ray Photoelectron and Desorption Spectroscopies
Studies of Corrosive Outgasses from Via Holes Using Thermal Desorption Spectroscopy
X-Ray Photoelectron Spectroscopic Studies on Pyrolysis of Plasma-Polymerized Fluorocarbon Films on Si
Thermal Desorption and Infrared Studies of Plasma-Enhanced Chemical Vapor Deposited SiO Films with Tetraethyiorthosilicate
Structural Study of Single {111}-Facetted CoSi_2/Si Interface Incorporated in a Silicon-on-Insulator Metal-Oxide-Semiconductor-Field-Effect-Transistor(Semiconductors)
Corrugated Structures on Si(110) Surfaces Treated in Ammonium Fluoride Solutions
Desorption Kinetics of Ar Implanted into Si

もっと見る

スポンサーリンク