Structural Study of Single {111}-Facetted CoSi_2/Si Interface Incorporated in a Silicon-on-Insulator Metal-Oxide-Semiconductor-Field-Effect-Transistor(Semiconductors)

概要

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Metal-oxide-semiconductor field-effect transistors (MOSFETs) with single {111}-facetted silicide/silicon joints have been fabricated on silicon-on-insulator (SOI) substrates, using cobalt salicide. The interface structure is determined to be {111}Si//{111}CoSi_2 and (110)Si//(110)CoSi_2 by transmission electron microscopy. This report explains the formation mech-anism of an atomically-flat interface, which involves the lateral growth of silicide in the channel direction of the MOSFET. This mechanism also enables the fabrication of a novel MOSFET structure where the SOI beneath the sidewall is silicided, which is expected to be a highly effective method for reducing the series resistance.
社団法人応用物理学会の論文
2001-10-01