In Situ Observation of the C49-to-C54 Phase Transformation in TiSi_2 Thin Films by Transmission Electron Microscopy
スポンサーリンク
概要
- 論文の詳細を見る
The C49-to-C54 phase transformation of TiSi_2 has been studied by in situ transmission electron microscopy (TEM) in the high resolution mode using cross-sectional samples and by X-ray diffraction (XRD). XRD and TEM analyses suggest that the (131) plane of the C49 phase transforms to the (311) and/or (313) planes of the C54 phase. In Situ TEM observation shows that the interface of the transformation moves parallel to the Si substrate, while the direction of the transformation does not depend on the orientation of the C49 phase. The results indicate that the transformation occurs via the short-distance diffusion of atoms.
- 社団法人応用物理学会の論文
- 1996-04-15
著者
-
Hirashita N
Oki Electric Industry Co. Ltd. Vlsi R&d Center
-
Hirashita Norio
Vlsi Research And Development Center Oki Electric Industry Co. Ltd.
-
Hirashita Norio
Vlsi R&d Center Oki Electric Industry Co. Ltd.
-
Sinclair Robert
Department of Materials Science and Engineering, Stanford University
-
Sinclair R
Department Of Marerials Science And Engineering Stanford University
-
Sinclair Robert
Department Of Materials Science And Engineering Stanford University
-
TANAKA Hiroyuki
VLSI R&D Center, Oki Electric Industry Co., Ltd.
-
Tanaka Hiroyuki
Department of Electrical Engineering, Faculty of engineering Science, Osaka University
-
Sinclair Robert
Department of Marerials Science and Engineering, Stanford University
関連論文
- Improved Stability of Metal-Insulator-Diamond Semiconductor Interface by Employing BaF_2 Insulator Film
- Electrical Properties of Al/(Ba_XCa_)F_2/i-Diamond Metal-Insulator-Semiconductor Structures
- Electrical Stabilization of Diamond MIS Interface by Employing BaF_2 Insulator Film and Application to Diamond MISFETs
- In-situ TEMによるZr/Si界面反応の観察
- In-situ TEMによるZr/Si界面反応の観察
- A Site Specification Method of Gate Oxide Breakdown Spots by a New Test Structure of MOS Capacitors(Special Issue on Microelectronic Test Structures)
- Cross-sectional Transmission Electron Microscope Studies on Intrinsic Breakdown Spots of Thin Gate Oxides
- SiO_2/Si Interfaces Studied by STM and HRTEM(II) : Etching and Deposition Technology
- SiO_2/Si Interfaces Studied by STM and HRTEM (II)
- Highly Improved Electrical Properties of Diamond Metal-Insulator-Semiconductor Field-Effect-Transistor Prepared by Ultrahigh Vacuum Process
- Electrical Properties of Al/CaF_2/i-Diamond Metal-Insulator-Semiconductor Field-Effect-Transistor Fabricated by Ultrahigh Vacuum Process
- Highly Improved Electrical Properties of Diamond MISFET Prepared by Ultrahigh-Vacuum Process
- Electrical Properties of Metal-Insulator-Semiconductor (MIS) Interface and MISFETs Employing Hydrogenated Diamond Film Surface
- Mechanisms of Surface Reaction in Fluorocarbon Dry Etching of Silicon Dioxide : An Effect of Thermal Excitation
- Step Edge Structures on Si(112) and (113) Surfaces Treated in NH_4F Solution
- Effect of Stress on Oxide Edge Shape of Local Oxidation of Silicon for Various Oxidation Temperatures
- Kinetic Analysis of the C49-to-C54 Phase Transformation in TiSi_2 Thin Films by In Situ Observation
- In Situ Observation of the C49-to-C54 Phase Transformation in TiSi_2 Thin Films by Transmission Electron Microscopy
- Vertical Profile Control in Ultrahigh-Aspect-Ratio Contact Hole Etching with 0.05-µm-Diameter Range
- Reaction Studies between Fluorocarbon Films and Si Using Temperature-Programmed X-Ray Photoelectron and Desorption Spectroscopies
- Studies of Corrosive Outgasses from Via Holes Using Thermal Desorption Spectroscopy
- X-Ray Photoelectron Spectroscopic Studies on Pyrolysis of Plasma-Polymerized Fluorocarbon Films on Si
- Thermal Desorption Spectroscopy and X-Ray Photoelectron Spectroscopy Study of CF_x Layer Deposited on Si and Si0_2
- Thermal Desorption and Infrared Studies of Plasma-Enhanced Chemical Vapor Deposited SiO Films with Tetraethyiorthosilicate
- Structural Study of Single {111}-Facetted CoSi_2/Si Interface Incorporated in a Silicon-on-Insulator Metal-Oxide-Semiconductor-Field-Effect-Transistor(Semiconductors)
- Corrugated Structures on Si(110) Surfaces Treated in Ammonium Fluoride Solutions
- Desorption Kinetics of Ar Implanted into Si