Reaction Studies between Fluorocarbon Films and Si Using Temperature-Programmed X-Ray Photoelectron and Desorption Spectroscopies
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概要
- 論文の詳細を見る
Surface structure of plasma-polymerized fluorocarbon thin film on Si and gas desorption were concurrently studied as a function of temperature between 20 and 700℃ using temperature-programmed X-ray photoelectron spectroscopy with a residual gas analyzer. The films, consisting of CF_3, CF_2, CF and C-CF_x bonds, with the F/C ratio of 1.7 were found to be stable up to 200℃ and to thermally decompose above 200℃. SiF_4 desorption, following gradual pyrolysis with decrease in CF_3, CF_2 and CF bonds due to desorption of fluorocarbon gases, was observed for F/C ratios ranging from 1 to 0.1. The pyrolytic process of the film and the thermal reaction with Si substrates were further discussed based on results of additional desorption and ion-induced reaction experiments.
- 社団法人応用物理学会の論文
- 1995-04-30
著者
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Fujita K
Oki Electric Industry Co. Ltd. Tokyo
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Fujita K
Department Of Material Chemistry Graduate School Of Engineering Kyoto University
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Hirashita N
Oki Electric Industry Co. Ltd. Vlsi R&d Center
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Hirashita Norio
Vlsi Research And Development Center Oki Electric Industry Co. Ltd.
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Hirashita Norio
Vlsi R&d Center Oki Electric Industry Co. Ltd.
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Fujita K
Univ. Tokyo Tokyo Jpn
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KANAMORI Jun
VLSI R&D Center, Oki Electric Industry Co., Ltd.
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Kanamori J
Vlsi Research And Development Center Oki Electric Industry Co. Ltd.
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Kanamori Jun
Vlsi R&d Center Oki Electric Industry Co. Ltd.
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MIYAKAWA Yasuhiro
VLSI R&D Center, Electronic Devices Group, Oki Electric Industry Co., Ltd.
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FUJITA Ken
VLSI Research and Development Center, Oki Electric Industry Co., Ltd.
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Miyakawa Yasuhiro
Vlsi Research And Development Center Oki Electric Industry Co. Ltd.
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Fujita Ken
Vlsi Research And Development Center Oki Electric Industry Co. Ltd.
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