Reaction Studies between Fluorocarbon Films and Si Using Temperature-Programmed X-Ray Photoelectron and Desorption Spectroscopies

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概要

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• Surface structure of plasma-polymerized fluorocarbon thin film on Si and gas desorption were concurrently studied as a function of temperature between 20 and 700℃ using temperature-programmed X-ray photoelectron spectroscopy with a residual gas analyzer. The films, consisting of CF_3, CF_2, CF and C-CF_x bonds, with the F/C ratio of 1.7 were found to be stable up to 200℃ and to thermally decompose above 200℃. SiF_4 desorption, following gradual pyrolysis with decrease in CF_3, CF_2 and CF bonds due to desorption of fluorocarbon gases, was observed for F/C ratios ranging from 1 to 0.1. The pyrolytic process of the film and the thermal reaction with Si substrates were further discussed based on results of additional desorption and ion-induced reaction experiments.

• 社団法人応用物理学会の論文
• 1995-04-30

著者

• Fujita K

  Oki Electric Industry Co. Ltd. Tokyo

• Fujita K

  Department Of Material Chemistry Graduate School Of Engineering Kyoto University

• Hirashita N

  Oki Electric Industry Co. Ltd. Vlsi R&d Center

• Hirashita Norio

  Vlsi Research And Development Center Oki Electric Industry Co. Ltd.

• Hirashita Norio

  Vlsi R&d Center Oki Electric Industry Co. Ltd.

• Fujita K

  Univ. Tokyo Tokyo Jpn

• KANAMORI Jun

  VLSI R&D Center, Oki Electric Industry Co., Ltd.

• Kanamori J

  Vlsi Research And Development Center Oki Electric Industry Co. Ltd.

• Kanamori Jun

  Vlsi R&d Center Oki Electric Industry Co. Ltd.

• MIYAKAWA Yasuhiro

  VLSI R&D Center, Electronic Devices Group, Oki Electric Industry Co., Ltd.

• FUJITA Ken

  VLSI Research and Development Center, Oki Electric Industry Co., Ltd.

• Miyakawa Yasuhiro

  Vlsi Research And Development Center Oki Electric Industry Co. Ltd.

• Fujita Ken

  Vlsi Research And Development Center Oki Electric Industry Co. Ltd.

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