0.2 μm Hole Pattern Generation by Critical Dimension Biassing Using Resin Overcoat

概要

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A method of generating very small hole patterns by introduction of transfer bias into a resist pattern after original resist pattern generation has been developed and evaluated. Introduction of transfer bias was carried out using a resin overcoating and strippig process and a novolak resist pattern was used as the original hole pattern. The overcoating resin used was polymethylmethacrylate (PMMA) and transfer bias was introduced by intermixing of novolak resin and PMMA during the PMMA baking step. From scanning electron microscope (SEM) observation, it appeared that 0.20 μm hole pattern generation was possible by i-line lithography. The amount of undersize was controllable by PMMA bake temperature, and 0.06-0.15 μm undersize could be achieved by using a bake temperature range of 60-120℃. From results of etching SiO_2 substrate using overcoat treated hole pattern, it appeared that the mixinglayer functioned as an etching mask for oxide film.
社団法人応用物理学会の論文
1995-12-30