Characteristics of Very High-Aspect-Ratio Contact Hole Etching
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概要
- 論文の詳細を見る
An ultrahigh-aspect-ratio, 0.06-μm-diameter, 2-μm-deep contact hole pattern of SiO_2 was successfully fabricated using a poly-Si mask and a magnetically enhanced reactive-ion-etching (RIE) system in a mixture of CHF_3/CO gas. In this dimensional area, processing for vertical profiles is extremely difficult, and problems in the form of bowing at the sidewalls of the holes can occur. Furthermore, it is possible that ion flux and energy are significantly reduced when ions pass through the poly-Si mask, rather than through the SiO_2 hole. The bowing is associated with bending of the incident ion trajectories, where the first stage of the trajectory change occurs at the mask, and subsequent multiple scattering of ions at the sidewall of the hole can occur. Other factors include sidewall protection by redeposited Si sputtered from the poly-Si mask and/or the deposited fluorocarbon polymers, and the effects of ion energy and flux bombarding these deposited materials.
- 社団法人応用物理学会の論文
- 1997-04-30
著者
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HORIIKE Yasuhiro
Department of Electrical Engineering, Toyo University
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Taino Mitsuhiko
Kek High Energy Accelerator Research Organization
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IKEGAMI Naokatsu
VLSI R〓D Center, Oki Electric Industry Co., Ltd.
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MATSUI Tetsuyuki
Department of Physical Science, Graduate School of Engineering Science, Osaka University
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Horiike Yasuhiro
Department Of Materials Science The University Of Tokyo
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Horiike Yasuhiro
Department Of Electrical & Electronics Engineering Tokyo University
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Horiike Yasuhiro
Department Of Electrical Engineering Hiroshima University
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Matsui Toshiaki
Communication Research Laboratory Ministry Of Posts And Telecommunications
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Matsui T
Department Of Systems Innovation Graduate School Of Engineering Science Osaka University
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KANAMORI Jun
VLSI R&D Center, Oki Electric Industry Co., Ltd.
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Kanamori J
Vlsi Research And Development Center Oki Electric Industry Co. Ltd.
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Kanamori Jun
Vlsi R&d Center Oki Electric Industry Co. Ltd.
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Matsui Takayuki
Vlsi R&d Center Oki Electric Industry Co. Ltd.
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Yabata Atsushi
VLSI Research and Development Center, Oki Electric Industry Co., Ltd, 550-1 Higashiasakawa, Hachioji
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Horiike Yasuhiro
Department Of Materials Engineering The University Of Tokyo
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Horiike Yasuhiro
Department Of Electrical And Electronics Engineering Toyo University:department Of Materials Science
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Horiike Yasuhiro
Toshiba Research And Development Center Integrated Circuit Laboratory
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Horiike Yasuhiro
Toyo University
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Yabata Atsushi
Vlsi Research And Development Center Oki Electric Industry Co. Ltd.
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Takasaki Minoru
Kek High Energy Accelerator Research Organization
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Ikegami Naokatsu
Vlsi R&d Center Oki Electric Industry Co. Ltd.
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Horiike Yasuhiro
Department Of Electrical & Electronics Engineering Toyo University
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Yabata Atsushi
VLSI R&D Center, Electronic Devices Group, Oki Electric Industry Co., Ltd
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