Roles of Ions and Radicals in Silicon Oxide Etching : Etching and Deposition Technology
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-01-31
著者
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IKEGAMI Naokatsu
VLSI R〓D Center, Oki Electric Industry Co., Ltd.
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KANAMORI Jun
VLSI R&D Center, Oki Electric Industry Co., Ltd.
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Kanamori J
Vlsi Research And Development Center Oki Electric Industry Co. Ltd.
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Kanamori Jun
Vlsi R&d Center Oki Electric Industry Co. Ltd.
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OZAWA Nobuo
VLSI R&D Center, Oki Electric Industry Co., Ltd.
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Ozawa N
Oki Electric Ind. Co. Ltd. Tokyo Jpn
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Ozawa Nobuo
Vlsi R&d Center Oki Electric Industry Co. Ltd.
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MIYAKAWA Yasuhiro
VLSI R&D Center, Electronic Devices Group, Oki Electric Industry Co., Ltd.
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KONISHI Mamoru
VLSI R & D Center, Electronic Devices, OKI Electric Industry Co., Ltd
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Konishi M
Basic Process Technology Department Advanced Devices Department Usli R&d Labs. Semiconductor Co.
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Miyakawa Yasuhiro
Vlsi Research And Development Center Oki Electric Industry Co. Ltd.
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Ikegami Naokatsu
Vlsi R&d Center Oki Electric Industry Co. Ltd.
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- Roles of Ions and Radicals in Silicon Oxide Etching
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