Electron Beam Induced Damage of MOS Gate Oxide
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概要
- 論文の詳細を見る
Threshold voltage (V_<th>) shift of a metal oxide semiconductor (MOS) system due to electron beam (EB) exposure can be expressed quantitatively as a function of the EB dosage which was derived easily as a solution of a differential equation based on the hole capturing model in the gate oxide. The theoretical model assumes two steps for hole capturing. First is the hole capturing by intrinsic hole traps leading to steep V_<th> shift with EB dosage at early exposure stages. The second is the hole capturing by newborn hole traps due to the EB injection, leading to a rather slow V_<th> variation at a higher EB dosage. The model shows good agreement with the experimental result over a wide range of electron beam dosages. Moreover, hole injection efficiency in the gate oxide is found to be higher for the third Aluminum interconnection layer exposure than for the first Al layer, corresponding to higher deposition energy around the gate oxide obtained by the Monte Carlo simulation result.
- 社団法人応用物理学会の論文
- 1998-03-30
著者
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Koike K
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
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Kubota M
Opto-electronics Laboratories Oki Electric Industry Co. Ltd.
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Konishi M
Basic Process Technology Department Advanced Devices Department Usli R&d Labs. Semiconductor Co.
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KONISHI Morikazu
Basic Process Technology Department, Advanced Devices Department, USLI R&D Labs., Semiconductor Co.,
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KUBOTA Michitaka
Basic Process Technology Department, Advanced Devices Department, USLI R&D Labs., Semiconductor Co.,
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KOIKE Kaoru
Basic Process Technology Department, Advanced Devices Department, USLI R&D Labs., Semiconductor Co.,
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Koike Kunihiko
Shiga Technology Center Iwatani International Corp
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Koike Kazuto
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
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Konishi Morikazu
Basic Process Technology Department, Advanced Devices Department, USLI R&D Labs., Semiconductor Co., Sony Corp.
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