Effect of Highly Concentrated Ozone on the Etching Properties of Preoxide Films on Si(100) : Semiconductors
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概要
- 論文の詳細を見る
We have investigated the effect of ozone on already existing silicon oxide films as preoxide on Si(100). The use of highly concentrated ozone (25vol%) at atmospheric pressure has made it possible to modify a native oxide film on Si(100) at 350℃, resulting in upgraded film quality and reduced thickness of structural transition layers. This was shown by the change of an etching rate by hydrofluoric acid (HF) solution of the oxide film exposed to ozone. However, the exposure of ozone to Si(100) at 350℃ with an already existing thermally grown oxide film caused no change in the distribution of transition layers in the oxide. This contrast suggests the possibility of upgrading the properties of a preoxide film without structural transition layers at the appropriate substrate temperature.
- 社団法人応用物理学会の論文
- 2002-07-01
著者
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KUROKAWA Akira
National Institute of Advanced Industrial Science and Technology (AIST)
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ICHIMURA Shingo
National Institute of Advanced Industrial Science and Technology (AIST)
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NAKAMURA Ken
National Institute of Advanced Industrial Science and Technology (AIST)
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Ichimura Shingo
National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Koike K
Shiga Technology Center Iwatani International Corporation
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Koike Kunihiko
Shiga Technology Center Iwatani International Corp
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ICHIMURA Shigeo
National Institute of Advanced Industrial Science and Technology (AIST)
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NAKAMURA Ken
National Institute for Agro-Environmental Sciences
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