Secondary Ion Mass Spectrometry of Organic Thin Films Using Metal-Cluster-Complex Ion Source
スポンサーリンク
概要
- 論文の詳細を見る
Tetrairidium dodecacarbonyl, Ir4(CO)12, is a metal cluster complex that has a molecular weight of 1104.9. Using a metal-cluster-complex ion source, secondary ion mass spectrometry (SIMS) of poly(methyl methacrylate) (PMMA) thin films on silicon substrates was performed with a quadrupole mass spectrometer. The secondary ion intensity of PMMA bombarded with Ir4(CO)7+ ions was investigated in the beam energy ranging from 3 to 10 keV at an incident angle of 45°. For comparison, bombardment with oxygen ions, O2+, was also tested. It was confirmed that the use of Ir4(CO)7+ ions enhanced secondary ion intensity by at least one order of magnitude compared with that of O2+ ions. Experimental results also showed that secondary ion intensity increased with beam energy; particularly, high-mass secondary ion intensity markedly increased.
- Japan Society of Applied Physicsの論文
- 2006-09-25
著者
-
Itoh Hiroshi
National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
-
FUJIWARA Yukio
National Institute of Advanced Industrial Science and Technology (AIST)
-
KONDOU Kouji
National Institute of Advanced Industrial Science and Technology (AIST)
-
NONAKA Hidehiko
National Institute of Advanced Industrial Science and Technology (AIST)
-
FUJIMOTO Toshiyuki
National Institute of Advanced Industrial Science and Technology (AIST)
-
KUROKAWA Akira
National Institute of Advanced Industrial Science and Technology (AIST)
-
Ichimura Shingo
National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
-
Tomita Mitsuhiro
Corporate Research And Development Center Toshiba Corporation
-
Saito Naoaki
National Institute Of Advanced Industrial Science And Technology
-
Kurokawa Akira
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Kondou Kouji
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Itoh Hiroshi
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
関連論文
- Production of Stable Ion Beam of Os_3(CO)_ with Compact Metal-Cluster-Complex Ion Source
- Observation of Sputtered Si Surface Irradiated with Metal Cluster Complex Ions
- Rapid and Uniform SiO_2 Film Growth on 4inch Si Wafer Using 100%-O_3 Gas
- Evaluation of Outermost Surface Temperature of Silicon Substrates during UV-Excited Ozone Oxidation at Low Temperature
- Relationship between Ozone Oxidation and Stress Evolution on an H-Terminated Si Surface
- Nanoscale-order Homogeneous Structure of SiO_2 Film on Poly-silicon Grown at Room Temperature using UV Light Excited Ozone
- Hyperthermal Beam for Oxidation and Nitridation Produced by Laser Evaporation of MiXed O_3/N_2O Cryogenic Film : Surfaces, Interfaces, and Films
- Viscosity Measurement Using Impedance and Frequency of a Quartz Resonator Vibrating in a Viscous Flowing Gas
- Reliability of parameters of associated base straight line in step height samples : Uncertainty evaluation in step height measurements using nanometrological AFM
- Rapid and Uniform SiO2 Film Growth on 4 inch Si Wafer Using 100%-O3 Gas
- Ultra Thin Film Growth of Pd by Radical Enhanced Vapor Deposition
- Mass Markers for Time-of-Flight Secondary Ion Mass Spectrometry Spectrum in a Large Mass Region Using Ir4(CO)12 Metal Cluster Complex Sample
- Ion Beam Generation from an Electrolyte Solution Containing Polyatomic Cations and Anions for Secondary Ion Mass Spectrometry
- Improvement in Chemical-Vapor-Deposited-SiO2 Film Properties by Annealing with UV-Light-Excited Ozone
- Low-Temperature Oxidation of Silicon using UV-Light-Excited Ozone
- Effect of Highly Concentrated Ozone on the Etching Properties of Preoxide Films on Si(100) : Semiconductors
- Simultaneous Measurement of Mass and Velocity Distributions of Cluster Beams by Orthogonal Acceleration Time-of-Flight Mass Spectrometers
- Advantage of Highly Concentrated (${\geq}90$%) Ozone for Chemical Vapor Deposition SiO2 Grown under 200 °C Using Hexamethyldisilazane and Ultraviolet Light Excited Ozone
- Measured Gas Concentrations and Flow Properties in SiH4–H2 Mixtures
- Photochemical Reaction of Ozone and 1,1,1,3,3,3-Hexamethyldisilazane: Analysis of the Gas Reaction between Precursors in a Photochemical Vapor Deposition Process
- Evaluation of Errors in the Measurement of Surface Roughness at High Spatial Frequency by Atomic Force Microscopy on a Thin Film
- Vibrational Spectroscopic Study of the Interface of SiO2/Si(100) Fabricated by Highly Concentrated Ozone: Direct Evidence for Less Strained Si–O–Si Bond Angle
- Development of a Compact Time-of-Flight Mass Spectrometer with a Length of 1 m for Processing Plasma Diagnostics
- Secondary Ion Mass Spectrometry of Organic Thin Films Using Metal-Cluster-Complex Ion Source
- Relationship between Ozone Oxidation and Stress Evolution on an H-Terminated Si Surface
- Secondary-Ion-Mass-Spectrometry Depth Profiling of Ultra-shallow Boron Delta Layers in Silicon with Massive Molecular Ion Beam of Ir4(CO)7+
- Beam-induced Nanoscale Ripple Formation on Silicon with the Metal-Cluster-Complex Ion of Ir4(CO)7+