Rapid and Uniform SiO_2 Film Growth on 4inch Si Wafer Using 100%-O_3 Gas

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概要

• 論文の詳細を見る
• 2005-01-15

著者

• NONAKA Hidehiko

  National Institute of Advanced Industrial Science and Technology (AIST)

• ICHIMURA Shingo

  National Institute of Advanced Industrial Science and Technology (AIST)

• Nihei Yoshimasa

  Tokyo University Of Science

• NISHIGUCHI Tetsuya

  Meidensha Corporation

• MORIKAWA Yoshiki

  Meidensha Corporation

• KEKURA Mitsuru

  Meidensha Corporation

• Morikawa Y

  Meidensha Corporation

• NISHIGUCHI Tetsuya

  National Institute of Advanced Industrial Science and Technology (AIST)

• SATO Yosuke

  National Institute of Advanced Industrial Science and Technology (AIST)

• NOYORI Takeshi

  Meidensha Corporation

• Nishiguchi T

  Meidensha Corporation

関連論文

• Production of Stable Ion Beam of Os_3(CO)_ with Compact Metal-Cluster-Complex Ion Source
• Phase-Change Optical Recording Films with AgInTe_2-Sb -Te System
• Rapid and Uniform SiO_2 Film Growth on 4inch Si Wafer Using 100%-O_3 Gas
• Evaluation of Outermost Surface Temperature of Silicon Substrates during UV-Excited Ozone Oxidation at Low Temperature
• Relationship between Ozone Oxidation and Stress Evolution on an H-Terminated Si Surface
• Advantage of highly concentrated ([greater-than or equal to]90%) ozone for chemical vapor deposition SiO2 grown under 200℃ using hexamethyldisilazane and ultraviolet light excited ozone (Special issue: Dielectric thin films for future ULSI devices: scienc
• Nanoscale-order Homogeneous Structure of SiO_2 Film on Poly-silicon Grown at Room Temperature using UV Light Excited Ozone
• Hyperthermal Beam for Oxidation and Nitridation Produced by Laser Evaporation of MiXed O_3/N_2O Cryogenic Film : Surfaces, Interfaces, and Films
• Hyperthermal O_3 Beam Produced by Laser Ablation of Solid-Ozone Film
• Hydrothermal Transformation of Gel Pb(Zr_, Ti_)O_3 Thin Films into Perovskite Phase at Low Temperature of 160℃
• Rapid and Uniform SiO2 Film Growth on 4 inch Si Wafer Using 100%-O3 Gas
• Mass Markers for Time-of-Flight Secondary Ion Mass Spectrometry Spectrum in a Large Mass Region Using Ir4(CO)12 Metal Cluster Complex Sample
• Ion Beam Generation from an Electrolyte Solution Containing Polyatomic Cations and Anions for Secondary Ion Mass Spectrometry
• Improvement in Chemical-Vapor-Deposited-SiO2 Film Properties by Annealing with UV-Light-Excited Ozone
• Low-Temperature Oxidation of Silicon using UV-Light-Excited Ozone
• Effect of Highly Concentrated Ozone on the Etching Properties of Preoxide Films on Si(100) : Semiconductors
• Advantage of Highly Concentrated (${\geq}90$%) Ozone for Chemical Vapor Deposition SiO2 Grown under 200 °C Using Hexamethyldisilazane and Ultraviolet Light Excited Ozone
• Measured Gas Concentrations and Flow Properties in SiH4–H2 Mixtures
• Photochemical Reaction of Ozone and 1,1,1,3,3,3-Hexamethyldisilazane: Analysis of the Gas Reaction between Precursors in a Photochemical Vapor Deposition Process
• Secondary Ion Mass Spectrometry of Organic Thin Films Using Metal-Cluster-Complex Ion Source
• Relationship between Ozone Oxidation and Stress Evolution on an H-Terminated Si Surface
• Secondary-Ion-Mass-Spectrometry Depth Profiling of Ultra-shallow Boron Delta Layers in Silicon with Massive Molecular Ion Beam of Ir4(CO)7+
• Beam-induced Nanoscale Ripple Formation on Silicon with the Metal-Cluster-Complex Ion of Ir4(CO)7+
• Janet H. Randall, Linking: The Geometry of Argument Structure, Dordrecht, Springer, 2010, xv+325pp.

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