Low-Temperature Oxidation of Silicon using UV-Light-Excited Ozone
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概要
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An ultra low-temperature ($< 300$°C) silicon oxidation process in which KrF excimer laser light ($\lambda=248$ nm) is irradiated in highly concentrated ozone has been developed. The growth rate of SiO2 film was 5.2 nm/10 min at 300°C and 3.6 nm/10 min at 70°C. The leakage current densities of grown at 70°C SiO2 in an electric field of over 8 MV/cm match well the calculated curve based on the Fowler–Nordheim tunneling. The oxidation mechanisms for two growth modes are discussed.
- 2005-08-10
著者
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NONAKA Hidehiko
National Institute of Advanced Industrial Science and Technology (AIST)
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Ichimura Shingo
National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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NISHIGUCHI Tetsuya
National Institute of Advanced Industrial Science and Technology (AIST)
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Nishiguchi Tetsuya
National Institute of Advanced Industrial Science and Technology (AIST), Research Institute of Instrumentation Frontier, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Tosaka Aki
National Institute of Advanced Industrial Science and Technology (AIST), Research Institute of Instrumentation Frontier, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Nonaka Hidehiko
National Institute of Advanced Industrial Science and Technology (AIST), Research Institute of Instrumentation Frontier, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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