Mass Markers for Time-of-Flight Secondary Ion Mass Spectrometry Spectrum in a Large Mass Region Using Ir4(CO)12 Metal Cluster Complex Sample
スポンサーリンク
概要
- 論文の詳細を見る
The time-of-flight secondary ion mass spectrometry (TOF-SIMS) spectra of a metal cluster complex, Ir4(CO)12, evaporated on a Si wafer have been analyzed to clarify the origin of the mass deviation of the peaks from the true mass positions expected from the $m/z$ values. Most of the peaks in the TOF-SIMS spectra are found to show shifts from the true positions due to the dissociation of secondary ions, i.e., release of a CO ligand, after the ionization. In conclusion, the ion peaks that can be used as mass markers of the TOF-SIMS system must be stable parent ions; such peaks are those assigned to Ir4(CO)12+ ($m/z$ 1,100–1,108) and Ir5(CO)14+ ($m/z$ 1,347–1,357) for positive ions, and Ir4(CO)11- ($m/z$ 1,072–1,080), Ir5(CO)13- ($m/z$ 1,319–1,329), and Ir8(CO)22- ($m/z$ 2,144–2,160) for negative ions with 10–50 ppm precision.
- 2010-08-25
著者
-
FUJIWARA Yukio
National Institute of Advanced Industrial Science and Technology (AIST)
-
NONAKA Hidehiko
National Institute of Advanced Industrial Science and Technology (AIST)
-
FUJIMOTO Toshiyuki
National Institute of Advanced Industrial Science and Technology (AIST)
-
Saito Naoaki
National Institute Of Advanced Industrial Science And Technology
-
Nakanaga Taisuke
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Nonaka Hidehiko
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Fujimoto Toshiyuki
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Nakanaga Taisuke
National Chemical Laboratory for Industry, Tsukuba Research Center
関連論文
- Production of Stable Ion Beam of Os_3(CO)_ with Compact Metal-Cluster-Complex Ion Source
- Rapid and Uniform SiO_2 Film Growth on 4inch Si Wafer Using 100%-O_3 Gas
- Evaluation of Outermost Surface Temperature of Silicon Substrates during UV-Excited Ozone Oxidation at Low Temperature
- Relationship between Ozone Oxidation and Stress Evolution on an H-Terminated Si Surface
- Nanoscale-order Homogeneous Structure of SiO_2 Film on Poly-silicon Grown at Room Temperature using UV Light Excited Ozone
- Reliability of parameters of associated base straight line in step height samples : Uncertainty evaluation in step height measurements using nanometrological AFM
- Rapid and Uniform SiO2 Film Growth on 4 inch Si Wafer Using 100%-O3 Gas
- Ultra Thin Film Growth of Pd by Radical Enhanced Vapor Deposition
- Mass Markers for Time-of-Flight Secondary Ion Mass Spectrometry Spectrum in a Large Mass Region Using Ir4(CO)12 Metal Cluster Complex Sample
- Ion Beam Generation from an Electrolyte Solution Containing Polyatomic Cations and Anions for Secondary Ion Mass Spectrometry
- Improvement in Chemical-Vapor-Deposited-SiO2 Film Properties by Annealing with UV-Light-Excited Ozone
- Low-Temperature Oxidation of Silicon using UV-Light-Excited Ozone
- Simultaneous Measurement of Mass and Velocity Distributions of Cluster Beams by Orthogonal Acceleration Time-of-Flight Mass Spectrometers
- Advantage of Highly Concentrated (${\geq}90$%) Ozone for Chemical Vapor Deposition SiO2 Grown under 200 °C Using Hexamethyldisilazane and Ultraviolet Light Excited Ozone
- Measured Gas Concentrations and Flow Properties in SiH4–H2 Mixtures
- Photochemical Reaction of Ozone and 1,1,1,3,3,3-Hexamethyldisilazane: Analysis of the Gas Reaction between Precursors in a Photochemical Vapor Deposition Process
- Development of a Compact Time-of-Flight Mass Spectrometer with a Length of 1 m for Processing Plasma Diagnostics
- Secondary Ion Mass Spectrometry of Organic Thin Films Using Metal-Cluster-Complex Ion Source
- Relationship between Ozone Oxidation and Stress Evolution on an H-Terminated Si Surface
- Secondary-Ion-Mass-Spectrometry Depth Profiling of Ultra-shallow Boron Delta Layers in Silicon with Massive Molecular Ion Beam of Ir4(CO)7+
- Beam-induced Nanoscale Ripple Formation on Silicon with the Metal-Cluster-Complex Ion of Ir4(CO)7+
- Infrared intensities in methyl chloride. III. Improvement of the anharmonic force field and the analysis of the overtone and combination band intensities.
- Infrared intensities in methyl chloride. II. Binary overtone and combination bands.
- Infrared intensities in methyl chloride. I. The fundamental bands.