Production of Stable Ion Beam of Os_3(CO)_<12> with Compact Metal-Cluster-Complex Ion Source
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-07-15
著者
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Fujiwara Yukio
Research Institute Of Instrumentation Frontier (riif) National Institute Of Advanced Industrial Scie
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FUJIWARA Yukio
National Institute of Advanced Industrial Science and Technology (AIST)
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KONDOU Kouji
National Institute of Advanced Industrial Science and Technology (AIST)
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TERANISHI Yoshikazu
National Institute of Advanced Industrial Science and Technology (AIST)
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NONAKA Hidehiko
National Institute of Advanced Industrial Science and Technology (AIST)
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FUJIMOTO Toshiyuki
National Institute of Advanced Industrial Science and Technology (AIST)
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KUROKAWA Akira
National Institute of Advanced Industrial Science and Technology (AIST)
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ICHIMURA Shingo
National Institute of Advanced Industrial Science and Technology (AIST)
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Ichimura Shingo
National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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Ichimura Shingo
Research Institute Of Instrumentation Frontier (riif) National Institute Of Advanced Industrial Scie
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Nonaka Hidehiko
Research Institute Of Instrumentation Frontier (riif) National Institute Of Advanced Industrial Scie
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Kondou Kouji
Research Institute Of Instrumentation Frontier (riif) National Institute Of Advanced Industrial Scie
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Teranishi Yoshikazu
Research Institute Of Instrumentation Frontier (riif) National Institute Of Advanced Industrial Scie
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Fujimoto Toshiyuki
Research Institute Of Instrumentation Frontier (riif) National Institute Of Advanced Industrial Scie
関連論文
- Production of Stable Ion Beam of Os_3(CO)_ with Compact Metal-Cluster-Complex Ion Source
- Observation of Sputtered Si Surface Irradiated with Metal Cluster Complex Ions
- Secondary Ion Mass Spectrometry of Organic Thin Films Using Metal-Cluster-Complex Ion Source
- Rapid and Uniform SiO_2 Film Growth on 4inch Si Wafer Using 100%-O_3 Gas
- Evaluation of Outermost Surface Temperature of Silicon Substrates during UV-Excited Ozone Oxidation at Low Temperature
- Relationship between Ozone Oxidation and Stress Evolution on an H-Terminated Si Surface
- Nanoscale-order Homogeneous Structure of SiO_2 Film on Poly-silicon Grown at Room Temperature using UV Light Excited Ozone
- Hyperthermal Beam for Oxidation and Nitridation Produced by Laser Evaporation of MiXed O_3/N_2O Cryogenic Film : Surfaces, Interfaces, and Films
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- Ultra Thin Film Growth of Pd by Radical Enhanced Vapor Deposition
- Mass Markers for Time-of-Flight Secondary Ion Mass Spectrometry Spectrum in a Large Mass Region Using Ir4(CO)12 Metal Cluster Complex Sample
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- Advantage of Highly Concentrated (${\geq}90$%) Ozone for Chemical Vapor Deposition SiO2 Grown under 200 °C Using Hexamethyldisilazane and Ultraviolet Light Excited Ozone
- Measured Gas Concentrations and Flow Properties in SiH4–H2 Mixtures
- Photochemical Reaction of Ozone and 1,1,1,3,3,3-Hexamethyldisilazane: Analysis of the Gas Reaction between Precursors in a Photochemical Vapor Deposition Process
- Vibrational Spectroscopic Study of the Interface of SiO2/Si(100) Fabricated by Highly Concentrated Ozone: Direct Evidence for Less Strained Si–O–Si Bond Angle
- Secondary Ion Mass Spectrometry of Organic Thin Films Using Metal-Cluster-Complex Ion Source
- Relationship between Ozone Oxidation and Stress Evolution on an H-Terminated Si Surface
- Secondary-Ion-Mass-Spectrometry Depth Profiling of Ultra-shallow Boron Delta Layers in Silicon with Massive Molecular Ion Beam of Ir4(CO)7+
- Beam-induced Nanoscale Ripple Formation on Silicon with the Metal-Cluster-Complex Ion of Ir4(CO)7+