Ichimura Shingo | National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn

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著作論文

Production of Stable Ion Beam of Os_3(CO)_ with Compact Metal-Cluster-Complex Ion Source
Evaluation of Outermost Surface Temperature of Silicon Substrates during UV-Excited Ozone Oxidation at Low Temperature
Hyperthermal Beam for Oxidation and Nitridation Produced by Laser Evaporation of MiXed O_3/N_2O Cryogenic Film : Surfaces, Interfaces, and Films
Rapid and Uniform SiO2 Film Growth on 4 inch Si Wafer Using 100%-O3 Gas
Ion Beam Generation from an Electrolyte Solution Containing Polyatomic Cations and Anions for Secondary Ion Mass Spectrometry
Improvement in Chemical-Vapor-Deposited-SiO2 Film Properties by Annealing with UV-Light-Excited Ozone
Low-Temperature Oxidation of Silicon using UV-Light-Excited Ozone
Effect of Highly Concentrated Ozone on the Etching Properties of Preoxide Films on Si(100) : Semiconductors
Advantage of Highly Concentrated (${\geq}90$%) Ozone for Chemical Vapor Deposition SiO2 Grown under 200 °C Using Hexamethyldisilazane and Ultraviolet Light Excited Ozone
Photochemical Reaction of Ozone and 1,1,1,3,3,3-Hexamethyldisilazane: Analysis of the Gas Reaction between Precursors in a Photochemical Vapor Deposition Process
Vibrational Spectroscopic Study of the Interface of SiO2/Si(100) Fabricated by Highly Concentrated Ozone: Direct Evidence for Less Strained Si–O–Si Bond Angle
Secondary Ion Mass Spectrometry of Organic Thin Films Using Metal-Cluster-Complex Ion Source
Relationship between Ozone Oxidation and Stress Evolution on an H-Terminated Si Surface
Secondary-Ion-Mass-Spectrometry Depth Profiling of Ultra-shallow Boron Delta Layers in Silicon with Massive Molecular Ion Beam of Ir4(CO)7+
Beam-induced Nanoscale Ripple Formation on Silicon with the Metal-Cluster-Complex Ion of Ir4(CO)7+

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