Improvement in Chemical-Vapor-Deposited-SiO2 Film Properties by Annealing with UV-Light-Excited Ozone

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概要

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• Ultraviolet-enhanced, highly concentrated (${>}90$ vol %) ozone gas annealing was carried out at 200 °C to fabricate as-deposited tetraethoxysilane chemical vapor deposited SiO2 film (TEOS-CVD films) applicable as a gate dielectric material for thin-film transistors. As a result of this annealing, the leakage current density, fixed charge density, and dielectric constant of the films decreased to those of thermally grown silicon oxide. The relative dielectric constant, for example, was reduced from 5.4 to 4.0. The films’ resistance to wet-etching solution was also improved, particularly within the region located 3–5 nm from the films’ surface. In the region, the reduction in the amount of the excess positive charges of Si and the increase in the density of an ideal Si–O bonding network were confirmed from X-ray photoelectron spectroscopy measurements. These results suggest that oxygen atoms are incorporated into the film, while impurities contained in the film such as OH are out gassed by the diffusion of oxygen atoms generated from the photo dissociation of ozone in the gas phase. The annealing effects with and without oxygen atom supply were compared and the mechanism of the annealing is discussed.

• 2009-11-25

著者

• NONAKA Hidehiko

  National Institute of Advanced Industrial Science and Technology (AIST)

• Ichimura Shingo

  National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn

• Saito Shigeru

  Core Technology Reserch & Development Center, Meidensha Corporation, Numazu, Shizuoka 410-8588, Japan

• Nishiguchi Tetsuya

  Core Technology Reserch & Development Center, Meidensha Corporation, Numazu, Shizuoka 410-8588, Japan

• Kameda Naoto

  Core Technology Reserch & Development Center, Meidensha Corporation, Numazu, Shizuoka 410-8588, Japan

• Kekura Mitsuru

  Core Technology Reserch & Development Center, Meidensha Corporation, Numazu, Shizuoka 410-8588, Japan

• Kameda Naoto

  Core Technology Reserch & Development Center, Meidensha Corporation, Numazu, Shizuoka 410-8588, Japan

• Kekura Mitsuru

  Core Technology Reserch & Development Center, Meidensha Corporation, Numazu, Shizuoka 410-8588, Japan

• Nonaka Hidehiko

  National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan

• Nishiguchi Tetsuya

  Core Technology Reserch & Development Center, Meidensha Corporation, Numazu, Shizuoka 410-8588, Japan

関連論文

• Production of Stable Ion Beam of Os_3(CO)_ with Compact Metal-Cluster-Complex Ion Source
• Rapid and Uniform SiO_2 Film Growth on 4inch Si Wafer Using 100%-O_3 Gas
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• Relationship between Ozone Oxidation and Stress Evolution on an H-Terminated Si Surface
• Nanoscale-order Homogeneous Structure of SiO_2 Film on Poly-silicon Grown at Room Temperature using UV Light Excited Ozone
• Hyperthermal Beam for Oxidation and Nitridation Produced by Laser Evaporation of MiXed O_3/N_2O Cryogenic Film : Surfaces, Interfaces, and Films
• Rapid and Uniform SiO2 Film Growth on 4 inch Si Wafer Using 100%-O3 Gas
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• Improvement in Chemical-Vapor-Deposited-SiO2 Film Properties by Annealing with UV-Light-Excited Ozone
• Low-Temperature Oxidation of Silicon using UV-Light-Excited Ozone
• Effect of Highly Concentrated Ozone on the Etching Properties of Preoxide Films on Si(100) : Semiconductors
• Advantage of Highly Concentrated (${\geq}90$%) Ozone for Chemical Vapor Deposition SiO2 Grown under 200 °C Using Hexamethyldisilazane and Ultraviolet Light Excited Ozone
• Measured Gas Concentrations and Flow Properties in SiH4–H2 Mixtures
• Photochemical Reaction of Ozone and 1,1,1,3,3,3-Hexamethyldisilazane: Analysis of the Gas Reaction between Precursors in a Photochemical Vapor Deposition Process
• Vibrational Spectroscopic Study of the Interface of SiO2/Si(100) Fabricated by Highly Concentrated Ozone: Direct Evidence for Less Strained Si–O–Si Bond Angle
• Secondary Ion Mass Spectrometry of Organic Thin Films Using Metal-Cluster-Complex Ion Source
• Relationship between Ozone Oxidation and Stress Evolution on an H-Terminated Si Surface
• Secondary-Ion-Mass-Spectrometry Depth Profiling of Ultra-shallow Boron Delta Layers in Silicon with Massive Molecular Ion Beam of Ir4(CO)7+
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