Hyperthermal Beam for Oxidation and Nitridation Produced by Laser Evaporation of MiXed O_3/N_2O Cryogenic Film : Surfaces, Interfaces, and Films

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Production of Stable Ion Beam of Os_3(CO)_ with Compact Metal-Cluster-Complex Ion Source
Sensitivity of Ion-Imaging Method and Mass Analysis using an Imaging Detector
Direct Estimation of the Ionization Region for XHV Measurement by Laser Ionization
Pressure Measurement by Photoelectron Counting
Pressure Measurement in XHV Region Using Nonresonant Multiphoton Ionization by Picosecond Pulsed Laser
Excimer Laser Ablation of Cryogenic NO_2 Films
Direct Imaging of Spatial Distribution of Ions Generated by Nonresonant Multiphoton Ionization of H_2 Gas
Preliminary Pressure Measurement in the Range of 10^ Pa Using a Picosecond Pulsed Laser
Nonresonant Multiphoton Ionization of H_2, CO and CO_2 by Second Harmonics of Picosecond YAG Laser
Measurement of Extreme-High-Vacuum Pressure by Laser Ionization
Multiphoton Ionization of Xe and Kr Atoms by an ArF Excimer Laser
A New Ion Counting System Devised for Mass-Selective Detection of Sputtered Neutrals in Laser SNMS
Nonresonant Multiphoton Ionization of He and Ne Atoms
Phase-Change Optical Recording Films with AgInTe_2-Sb -Te System
Rapid and Uniform SiO_2 Film Growth on 4inch Si Wafer Using 100%-O_3 Gas
Annealing Behavior of Irradiation-Induced Damagein an AlGaAs/GaAs Heterostructure by Low-Ertergy Electron Beam
Evaluation of Outermost Surface Temperature of Silicon Substrates during UV-Excited Ozone Oxidation at Low Temperature
Relationship between Ozone Oxidation and Stress Evolution on an H-Terminated Si Surface
Advantage of highly concentrated ([greater-than or equal to]90%) ozone for chemical vapor deposition SiO2 grown under 200℃ using hexamethyldisilazane and ultraviolet light excited ozone (Special issue: Dielectric thin films for future ULSI devices: scienc
Nanoscale-order Homogeneous Structure of SiO_2 Film on Poly-silicon Grown at Room Temperature using UV Light Excited Ozone
Hyperthermal Beam for Oxidation and Nitridation Produced by Laser Evaporation of MiXed O_3/N_2O Cryogenic Film : Surfaces, Interfaces, and Films
Hyperthermal O_3 Beam Produced by Laser Ablation of Solid-Ozone Film
Comparison of the Counting Efficiencies of an Imaging Counter and Electric-pulse Counter
Preliminary Measurement of H_2 Pressure through Detection of Photoelectrons in Vacuum Range from 10^ to 10^ Pa
Hydrothermal Transformation of Gel Pb(Zr_, Ti_)O_3 Thin Films into Perovskite Phase at Low Temperature of 160℃
Effects of Electron Irradiation on Two-Dimensional Electron Gas in AlGaAs/GaAs Heterostructure
Rapid and Uniform SiO2 Film Growth on 4 inch Si Wafer Using 100%-O3 Gas
Ion Beam Generation from an Electrolyte Solution Containing Polyatomic Cations and Anions for Secondary Ion Mass Spectrometry
Improvement in Chemical-Vapor-Deposited-SiO2 Film Properties by Annealing with UV-Light-Excited Ozone
Low-Temperature Oxidation of Silicon using UV-Light-Excited Ozone
Effect of Highly Concentrated Ozone on the Etching Properties of Preoxide Films on Si(100) : Semiconductors
Advantage of Highly Concentrated (${\geq}90$%) Ozone for Chemical Vapor Deposition SiO2 Grown under 200 °C Using Hexamethyldisilazane and Ultraviolet Light Excited Ozone
Photochemical Reaction of Ozone and 1,1,1,3,3,3-Hexamethyldisilazane: Analysis of the Gas Reaction between Precursors in a Photochemical Vapor Deposition Process
Vibrational Spectroscopic Study of the Interface of SiO2/Si(100) Fabricated by Highly Concentrated Ozone: Direct Evidence for Less Strained Si–O–Si Bond Angle
Secondary Ion Mass Spectrometry of Organic Thin Films Using Metal-Cluster-Complex Ion Source
Relationship between Ozone Oxidation and Stress Evolution on an H-Terminated Si Surface
Secondary-Ion-Mass-Spectrometry Depth Profiling of Ultra-shallow Boron Delta Layers in Silicon with Massive Molecular Ion Beam of Ir4(CO)7+
Beam-induced Nanoscale Ripple Formation on Silicon with the Metal-Cluster-Complex Ion of Ir4(CO)7+

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