Morikawa Y | Meidensha Corporation
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概要
関連著者
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Morikawa Y
Meidensha Corporation
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NISHIGUCHI Tetsuya
Meidensha Corporation
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MORIKAWA Yoshiki
Meidensha Corporation
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Nishiguchi T
Meidensha Corporation
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Ichimura S
National Inst. Advanced Industrial Sci. And Technol.(aist) Ibaraki Jpn
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Nonakai Hidehiko
National Institute Of Advanced Industrial Science And Technology (aist)
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NONAKA Hidehiko
National Institute of Advanced Industrial Science and Technology (AIST)
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ICHIMURA Shingo
National Institute of Advanced Industrial Science and Technology (AIST)
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KAMEDA Naoto
Meidensha Corporation
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KEKURA Mitsuru
Meidensha Corporation
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Ichimura Shingo
National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn
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NISHIGUCHI Tetsuya
Material & Device Research Department, Meidensha Corporation
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MORIKAWA Yoshiki
Material & Device Research Department, Meidensha Corporation
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MIYAMOTO Masaharu
Material & Device Research Department, Meidensha Corporation
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Miyamoto Masaharu
Material & Device Research Department Meidensha Corporation
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Kawamura Ichiro
Central Research And Development Laboratory Showa Shell Sekiyu K.k.
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Nakamura K
Display Device Research And Development Department Nippondenso Co. Ltd.
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OKUYAMA Masanori
Department of Electrical Engineering, Facully of Engineering Science, Osaka University
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Nakamura Keiji
Department Of Electrical Engineering School Of Engineering Nagoya University
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Okuyama Masanori
Department Of Electrical Engineering Faculty Of Engineering Schience Osaka University
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Nakamura K
Nagoya University Department Of Electrical Engineering
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ICHIMURA Shingo
Electrotechnical Laboratory, Umezono
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Nakamura K
Tokyo Electron Ltd. Tokyo Jpn
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Nakamura Kentaro
湘南工科大学
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Nihei Yoshimasa
Tokyo University Of Science
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中村 僖良
National Institute Of Advanced Industrial Science And Technology (aist)
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NAKAMURA Ken
National Institute of Advanced Industrial Science and Technology (AIST)
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USHIYAMA Tomoharu
National Institute of Advanced Industrial Science and Technology (AIST)
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Ichimura Shingo
Electrotechnical Laboratory
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ICHUMURA Shingo
National Institute of Advanced Industrial Science and Technology (AIST)
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Xu Huaping
Department Of Engineering Science Graduate School Of Engineering Science Osaka University
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NISHIGUCHI Tetsuya
National Institute of Advanced Industrial Science and Technology (AIST)
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SATO Yosuke
National Institute of Advanced Industrial Science and Technology (AIST)
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NOYORI Takeshi
Meidensha Corporation
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NONAKA Hidehiko
Electrotechnical Laboratory
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KIYOMOTO Tomofumi
Department of Engineering Science, Graduate School of Engineering Science, Osaka University
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MORIKAWA Yasuomi
Department of Engineering Science, Graduate School of Engineering Science, Osaka University
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LIN Chenglu
National Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Chine
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Lin Chenglu
National Laboratory Of Functional Materials For Informatics Shanghai Institute Of Metallurgy Chinese
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Kiyomoto Tomofumi
Department Of Engineering Science Graduate School Of Engineering Science Osaka University
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NAKAMURA Ken
National Institute for Agro-Environmental Sciences
著作論文
- Rapid and Uniform SiO_2 Film Growth on 4inch Si Wafer Using 100%-O_3 Gas
- Evaluation of Outermost Surface Temperature of Silicon Substrates during UV-Excited Ozone Oxidation at Low Temperature
- Advantage of highly concentrated ([greater-than or equal to]90%) ozone for chemical vapor deposition SiO2 grown under 200℃ using hexamethyldisilazane and ultraviolet light excited ozone (Special issue: Dielectric thin films for future ULSI devices: scienc
- Nanoscale-order Homogeneous Structure of SiO_2 Film on Poly-silicon Grown at Room Temperature using UV Light Excited Ozone
- Hyperthermal Beam for Oxidation and Nitridation Produced by Laser Evaporation of MiXed O_3/N_2O Cryogenic Film : Surfaces, Interfaces, and Films
- Hyperthermal O_3 Beam Produced by Laser Ablation of Solid-Ozone Film
- Hydrothermal Transformation of Gel Pb(Zr_, Ti_)O_3 Thin Films into Perovskite Phase at Low Temperature of 160℃