KAMEDA Naoto | Meidensha Corporation

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著作論文

Evaluation of Outermost Surface Temperature of Silicon Substrates during UV-Excited Ozone Oxidation at Low Temperature
Photochemical reaction of ozone and 1,1,1,3,3,3-hexamethyldisilazane: analysis of the gas reaction between precursors in a photochemical vapor deposition process
Advantage of highly concentrated ([greater-than or equal to]90%) ozone for chemical vapor deposition SiO2 grown under 200℃ using hexamethyldisilazane and ultraviolet light excited ozone (Special issue: Dielectric thin films for future ULSI devices: scienc
Nanoscale-order Homogeneous Structure of SiO_2 Film on Poly-silicon Grown at Room Temperature using UV Light Excited Ozone
Advantage of Highly Concentrated (${\geq}90$%) Ozone for Chemical Vapor Deposition SiO2 Grown under 200 °C Using Hexamethyldisilazane and Ultraviolet Light Excited Ozone

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