Advantage of highly concentrated ([greater-than or equal to]90%) ozone for chemical vapor deposition SiO2 grown under 200℃ using hexamethyldisilazane and ultraviolet light excited ozone (Special issue: Dielectric thin films for future ULSI devices: scienc
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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KAMEDA Naoto
Meidensha Corporation
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NISHIGUCHI Tetsuya
Meidensha Corporation
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Morikawa Y
Meidensha Corporation
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Nishiguchi T
Meidensha Corporation
関連論文
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- Evaluation of Outermost Surface Temperature of Silicon Substrates during UV-Excited Ozone Oxidation at Low Temperature
- Photochemical reaction of ozone and 1,1,1,3,3,3-hexamethyldisilazane: analysis of the gas reaction between precursors in a photochemical vapor deposition process
- Relationship between Ozone Oxidation and Stress Evolution on an H-Terminated Si Surface
- Advantage of highly concentrated ([greater-than or equal to]90%) ozone for chemical vapor deposition SiO2 grown under 200℃ using hexamethyldisilazane and ultraviolet light excited ozone (Special issue: Dielectric thin films for future ULSI devices: scienc
- Nanoscale-order Homogeneous Structure of SiO_2 Film on Poly-silicon Grown at Room Temperature using UV Light Excited Ozone
- Hyperthermal Beam for Oxidation and Nitridation Produced by Laser Evaporation of MiXed O_3/N_2O Cryogenic Film : Surfaces, Interfaces, and Films
- Hyperthermal O_3 Beam Produced by Laser Ablation of Solid-Ozone Film
- Hydrothermal Transformation of Gel Pb(Zr_, Ti_)O_3 Thin Films into Perovskite Phase at Low Temperature of 160℃
- Advantage of Highly Concentrated (${\geq}90$%) Ozone for Chemical Vapor Deposition SiO2 Grown under 200 °C Using Hexamethyldisilazane and Ultraviolet Light Excited Ozone