Advantage of Highly Concentrated (${\geq}90$%) Ozone for Chemical Vapor Deposition SiO2 Grown under 200 °C Using Hexamethyldisilazane and Ultraviolet Light Excited Ozone

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概要

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• We have compared the UV-light-excited ozone chemical vapor deposition (CVD) process conditions and the film quality for the cases where either highly concentrated (${\geq}90$%: HC) or 7% ozone and either hexamethyldisilazane (HMDS) or tetraethoxysilane (TEOS) are used. The SiO2 film deposited using HMDS and UV-excited HC ozone with an optimized flow rate has the highest quality in terms of leakage current density, etching rate, and deposition rate which are comparable or superior to those of the conventional thermal TEOS SiO2 grown at 620 °C. These results lead to a conclusion that it is preferable to use HC ozone for UV-light-excited-ozone CVD to deposit the high quality SiO2 films at a practical rate at a temperature as low as 200 °C.

• 2009-05-25

著者

• NONAKA Hidehiko

  National Institute of Advanced Industrial Science and Technology (AIST)

• KAMEDA Naoto

  Meidensha Corporation

• NISHIGUCHI Tetsuya

  Meidensha Corporation

• MORIKAWA Yoshiki

  Meidensha Corporation

• KEKURA Mitsuru

  Meidensha Corporation

• Ichimura Shingo

  National Inst. Of Advanced Industrial Sci. And Technol. (aist) Ibaraki Jpn

• Kameda Naoto

  Meidensha Corporation, Core Technology Research Laboratories, Numazu, Shizuoka 410-8588, Japan

• Kekura Mitsuru

  Meidensha Corporation, Core Technology Research Laboratories, Numazu, Shizuoka 410-8588, Japan

• Ichimura Shingo

  National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8565, Japan

• Morikawa Yoshiki

  Meidensha Corporation, Core Technology Research Laboratories, Numazu, Shizuoka 410-8588, Japan

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