Direct Imaging of Spatial Distribution of Ions Generated by Nonresonant Multiphoton Ionization of H_2 Gas

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1994-01-15

著者

• Shimizu H

  Nihon Kesso Koogaku Co. Ltd. Gunma Jpn

• Ichimura S

  National Inst. Advanced Industrial Sci. And Technol.(aist) Ibaraki Jpn

• Shimizu H

  National Inst. Materials And Chemical Res. Ibaraki Jpn

• KOKUBUN Kiyohide

  Electrotechnical Laboratory, Umezono

• ICHIMURA Shingo

  Elecrotechnical Laboratory

• SEKINE Shigeyuki

  Elecrotechnical Laboratory

• Joachim STEFFEN

  Elecrotechnical Laboratory

• KOKUBUN Kiyohide

  Elecrotechnical Laboratory

• SHIMIZU Hazime

  Elecrotechnical Laboratory

• Shimizu Hirofumi

  High-technology Research Center And Faculty Of Engineering Kansai University

• Shimizu Hirofumi

  Semiconductor And Integrated Circuits Division Hitachi Ltd.

• Joachim Steffen

  Elecrotechnical Laboratory:(present Address) Institute For Ion Beam Physics And Materials Research R

• Sekine S

  Electrotechnical Laboratory

• Shimizu H

  High-technology Research Center And Faculty Of Engineering Kansai University

• Kokubun Kiyohide

  Electrotechnical Laboratory Umezono

• Shimizu Hideaki

  Department Of Reaction Chemistry Faculty Of Engineering The University Of Tokyo

関連論文

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• Upper Critical Field of New Oxide Superconductor Bi-Sr-Ca-Cu-O : Electrical Properties of Condensed Matter
• Simplified AC Photovoltaic Measurermemt of Minority Carrier Lifetime in Czochralski-Grown Silicon Wafers Having Ring-Distributed Stacking Faults
• Observation of Ring-Distributed Microdefects in Czochralski-Grown Silicon Wafers with a Scanning Photon Microscope and Its Diagnostic Application to Device Processing
• Comparison of Minority Carrier Lifetimes Measured by Photoconductive Decay and ac Photovoltaic Method : Techniques, Instrumentations and Measurement
• Nondestructive Observations of Surface Flaws and Contaminations in Silicon Wafers by Means of a Scanning Photon Microscope : Semiconductors and Semiconductor Devices
• Calibration of Minority Carrier Lifetimes Measured with an ac Photovoltaic Method : Techniques, Instrumentations and Measurement
• Sensitivity of Ion-Imaging Method and Mass Analysis using an Imaging Detector
• Direct Estimation of the Ionization Region for XHV Measurement by Laser Ionization
• Pressure Measurement by Photoelectron Counting
• Pressure Measurement in XHV Region Using Nonresonant Multiphoton Ionization by Picosecond Pulsed Laser
• Excimer Laser Ablation of Cryogenic NO_2 Films
• Direct Imaging of Spatial Distribution of Ions Generated by Nonresonant Multiphoton Ionization of H_2 Gas
• Preliminary Pressure Measurement in the Range of 10^ Pa Using a Picosecond Pulsed Laser
• Nonresonant Multiphoton Ionization of H_2, CO and CO_2 by Second Harmonics of Picosecond YAG Laser
• Measurement of Extreme-High-Vacuum Pressure by Laser Ionization
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• Dependence of the Nonresonant Laser Ionization of Rare Gases on Laser Wavelength
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• Prevention of Thermal Degradations by Using Dehydrated LiNbO_3 Crystal
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• Evaluation of Outermost Surface Temperature of Silicon Substrates during UV-Excited Ozone Oxidation at Low Temperature
• Nanoscale-order Homogeneous Structure of SiO_2 Film on Poly-silicon Grown at Room Temperature using UV Light Excited Ozone
• Emittance Measurement of High-Brightness Microbeams
• Hyperthermal Beam for Oxidation and Nitridation Produced by Laser Evaporation of MiXed O_3/N_2O Cryogenic Film : Surfaces, Interfaces, and Films
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• Comparison of the Counting Efficiencies of an Imaging Counter and Electric-pulse Counter
• Preliminary Measurement of H_2 Pressure through Detection of Photoelectrons in Vacuum Range from 10^ to 10^ Pa
• Optimum Electrode Design for Effective Excitation of the Edge Mode by Taking Account of Its Electric Potential Distribution : SAW and Communication Device
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• Summary Abstract

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