Pressure Measurement by Photoelectron Counting
スポンサーリンク
概要
著者
-
Shimizu H
Nihon Kesso Koogaku Co. Ltd. Gunma Jpn
-
Ichimura S
National Inst. Advanced Industrial Sci. And Technol.(aist) Ibaraki Jpn
-
Shimizu H
National Inst. Materials And Chemical Res. Ibaraki Jpn
-
SEKINE Shigeyuki
Electrotechnical Laboratory, Umezono
-
ICHIMURA Shingo
Electrotechnical Laboratory, Umezono
-
KOKUBUN Kiyohide
Electrotechnical Laboratory, Umezono
-
SHIMIZU Hazime
Electrotechnical Laboratory, Umezono
-
Shimizu Hirofumi
High-technology Research Center And Faculty Of Engineering Kansai University
-
Shimizu Hirofumi
Semiconductor And Integrated Circuits Division Hitachi Ltd.
-
Sekine Shigeyuki
Electrotechnical Laboratory
-
Sekine S
Electrotechnical Laboratory
-
Shimizu H
High-technology Research Center And Faculty Of Engineering Kansai University
-
Ichimura Shingo
Electrotechnical Laboratory
-
Shimizu Hazime
Electrotechnical Laboratory
-
Kokubun Kiyohide
Electrotechnical Laboratory Umezono
-
Shimizu Hideaki
Department Of Reaction Chemistry Faculty Of Engineering The University Of Tokyo
-
KOKUBUN Kiyohide
Electrotechnical Laboratory
関連論文
- Superconducting Properties of Ba-Y-Cu-O Tape Prepared by the Doctor Blade Process : Electrical Properties of Condensed Matter
- Magnetic Properties and Upper Critical Fields of Sintered Tl-Ca-Ba-Cu-O Supercouiductors : Electrical Properties of Condensed Matter
- Upper Critical Field of New Oxide Superconductor Bi-Sr-Ca-Cu-O : Electrical Properties of Condensed Matter
- Depletion of Copper from the Grain Boundary Region of Copper-Nickel Alloys during Sputtering at Elevated Temperatures
- Simplified AC Photovoltaic Measurermemt of Minority Carrier Lifetime in Czochralski-Grown Silicon Wafers Having Ring-Distributed Stacking Faults
- Observation of Ring-Distributed Microdefects in Czochralski-Grown Silicon Wafers with a Scanning Photon Microscope and Its Diagnostic Application to Device Processing
- Comparison of Minority Carrier Lifetimes Measured by Photoconductive Decay and ac Photovoltaic Method : Techniques, Instrumentations and Measurement
- Nondestructive Observations of Surface Flaws and Contaminations in Silicon Wafers by Means of a Scanning Photon Microscope : Semiconductors and Semiconductor Devices
- Calibration of Minority Carrier Lifetimes Measured with an ac Photovoltaic Method : Techniques, Instrumentations and Measurement
- Sensitivity of Ion-Imaging Method and Mass Analysis using an Imaging Detector
- Direct Estimation of the Ionization Region for XHV Measurement by Laser Ionization
- Pressure Measurement by Photoelectron Counting
- Pressure Measurement in XHV Region Using Nonresonant Multiphoton Ionization by Picosecond Pulsed Laser
- Excimer Laser Ablation of Cryogenic NO_2 Films
- Direct Imaging of Spatial Distribution of Ions Generated by Nonresonant Multiphoton Ionization of H_2 Gas
- Preliminary Pressure Measurement in the Range of 10^ Pa Using a Picosecond Pulsed Laser
- Nonresonant Multiphoton Ionization of H_2, CO and CO_2 by Second Harmonics of Picosecond YAG Laser
- Measurement of Extreme-High-Vacuum Pressure by Laser Ionization
- Multiphoton Ionization of Xe and Kr Atoms by an ArF Excimer Laser
- A New Ion Counting System Devised for Mass-Selective Detection of Sputtered Neutrals in Laser SNMS
- Nonresonant Multiphoton Ionization of He and Ne Atoms
- Dependence of the Nonresonant Laser Ionization of Rare Gases on Laser Wavelength
- Detection of Sputtered Neutral Atoms by Nonresonant Multiphoton Ionization : Surfaces, Interfaces and Films
- Preliminary Results of Vacuum Pressure Measurement by Laser Ionization Method
- Nonlinear Optical Properties of Si(111)7×7 : Intensity Behavior of Second Harmonies from the Polarizations along [21^^-1^^-] and [011^^-] Axes
- Tape Conductor Fabrication Process for High-T_c Ba_2YCu_3O_ : Electrical Properties of Condensed Matter
- Excellence of Gate Oxide Integrity in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits Based on P^-/P^- Thin-Film Epitaxial Silicon Wafers
- Dependence of Warpage of Czochralski-Grown Silicon Wafers on Oxygen Concentration and Its Application to MOS Image-Sensor Device
- Estimation of Epitaxial Temperature Using X-Ray Diffraction for Si Films Grown on (100) Si by Molecular Beam Epitaxy
- X-Ray Diffraction from Low-Temperature-Grown Silicon Films with Small Surface Roughness
- Main Cause of Surface Waveguides Formed under LiNbO_3 Crystal Surface during Thermal Treatment
- Annealing Behavior of Irradiation-Induced Damagein an AlGaAs/GaAs Heterostructure by Low-Ertergy Electron Beam
- Adsorption and Thermal or Photodecomposition of Triethylgallium and Trimethylgallium on Si(111)-7×7
- Prevention of Thermal Degradations by Using Dehydrated LiNbO_3 Crystal
- Analysis of the Thickness Edge Mode in Piezoelectric Plates and Its Application to Resonators
- Photochemical Decomposition of Triethylgallium on Si(111) Studied by Means of STM, LEED, AES and Mass Spectroscopy
- Oxidation-Induced Stacking Faults Dependent on Oxygen Concentration in Czochralski-Growrn Silicon Wafers
- Evaluation of Outermost Surface Temperature of Silicon Substrates during UV-Excited Ozone Oxidation at Low Temperature
- Nanoscale-order Homogeneous Structure of SiO_2 Film on Poly-silicon Grown at Room Temperature using UV Light Excited Ozone
- Emittance Measurement of High-Brightness Microbeams
- Hyperthermal Beam for Oxidation and Nitridation Produced by Laser Evaporation of MiXed O_3/N_2O Cryogenic Film : Surfaces, Interfaces, and Films
- Hyperthermal O_3 Beam Produced by Laser Ablation of Solid-Ozone Film
- Application of STM Nanometer-Size Oxidation Process to Planar-Type MIM Diode
- Comparison of the Counting Efficiencies of an Imaging Counter and Electric-pulse Counter
- Preliminary Measurement of H_2 Pressure through Detection of Photoelectrons in Vacuum Range from 10^ to 10^ Pa
- Large Area Exposure in Synchrotron Radiation Lithography Utilizing the Steering of the Electron Beam in the Storage Ring
- Optimum Electrode Design for Effective Excitation of the Edge Mode by Taking Account of Its Electric Potential Distribution : SAW and Communication Device
- Gold Substrates for Scanning Tunneling Microscopy of Adsorbed Species
- Effects of Electron Irradiation on Two-Dimensional Electron Gas in AlGaAs/GaAs Heterostructure
- Phase- and Wall-Locked Modes Found in a Large Reversed-Field Pinch Machine, TPE-RX
- Synergistic Enhancement of Direct Synchrotron Radiation Etching of a Resist by a Low-Energy Oxygen Beam
- X-Ray Photoelectron Spectroscopy (XPS) Analysis of Oxide Formation on Silicon with High-Purity Ozone
- Mass- and Electron-Spectroscopic Observation of Resist Decomposition by Synchrotron Radiation
- Lithography Experiments Using Synchrotron Radiation from ETL Storage Ring : LATE NEWS
- Dissociation of H_2 Molecule by Picosecond Laser Irradiation at 532 nm in the 1-4×10^ W・cm^ Range
- Measurement of Vacuum Vessel Current and its Relation to Locked Mode in a Reversed-field Pinch Device, TPE-RX(Nuclear Science, Plasmas, and Electric Discharges)
- Confinement Improvement in a Single Helical State of' the Reversed Field Pinch Plasma on TPE-1RM20 : Fluids, Plasmas, and Electric Discharges
- Plasma and Mode Rotations in a Reversed-Field Pinch Device, TPE-1RM20
- A New Method for Cleaning the Surface of Ultra High-Purity Iron by High-Purity Ozone Exposure and UV Irradiation
- Micro-probe Auger Analysis of Si Migration in Al Metallization for LSI : A-3: DEVICE TECHNOLOGY (III)
- Dose Rate Effect of the Preferential Sputtering of Copper-Nickel Alloys by Argon Ion at Elevated Temperatures
- Characterization of Damaged Layer Using AC Surface Photovoltage in Silicon Wafers
- Initial Oxidation of Si(100)2×1 by Ozone : Transition of Growth Kinetics from Adsorption to Ultrathin Film Growth
- Effect of Optical Breakdown on Second Harmonic Generation from Si(111)7×7 with Nd:YAG Laser
- Adsorption of Benzene on Si(111)7×7 at Room Temperature Observed by Second Harmonic Generation (SHG)
- Laser Ignition of Premixed Methanol/Air on a Slot-Nozzle Burner
- Observation of Surface by Surface Electron Spectroscopic Tomography
- Summary Abstract
- Lithography Experiments using Synchrotron Radiation from ETL Storage Ring