Micro-probe Auger Analysis of Si Migration in Al Metallization for LSI : A-3: DEVICE TECHNOLOGY (III)
スポンサーリンク
概要
著者
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INOUE Tomoyasu
Toshiba Research and Development Center
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Shimizu Hazime
Electrotechnical Laboratory
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Ishida Tetsuo
Nippon Electric Varian Co. Ltd.
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HORIUCHI Shigeharu
Toshiba Research and Development Center, Tokyo Shibaura Electric Co.,Ltd.
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IWAI Hiroshi
Toshiba Research and Development Center, Tokyo Shibaura Electric Co.,Ltd.
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Horiuchi Shigeharu
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
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Iwai Hiroshi
Toshiba Research And Development Center Tokyo Shibaura Electric Co. Ltd.
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INOUE Tomoyasu
Toshiba Research and Development Center, Tokyo Shibaura Electric Co.,Ltd.
関連論文
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- Stripe Shaped Crystal Growth and Its Model of Silicon Films on Silicon Nitride Layer by Scanning Electron Beam Annealing
- Micro-probe Auger Analysis of Si Migration in Al Metallization for LSI : A-3: DEVICE TECHNOLOGY (III)
- Dose Rate Effect of the Preferential Sputtering of Copper-Nickel Alloys by Argon Ion at Elevated Temperatures
- Effect of Optical Breakdown on Second Harmonic Generation from Si(111)7×7 with Nd:YAG Laser
- Automatic Angular Distribution Measuring System in Rutherford Backscattering Analysis
- Electron Irradiation Effect in the Quantitative Auger Analysis of PSG
- Summary Abstract