Characterization of Defects in As-Implanted and Laser-Annealed Si Layer together with Electrical Properties of As Atoms

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1982-08-20

著者

• Shibata Kenji

  Toshiba Research And Development Center

• INOUE Tomoyasu

  Toshiba Research and Development Center

• KASHIWAGI Masahiro

  Toshiba Research and Development Center

• SHIBATA Kenji

  Toshiba Research and Development Center, Toshiba Corporation

• KASHIWAGI Masahiro

  Toshiba Research and Development Center, Toshiba Corporation

関連論文

• Growth of Large Grained Silicon on Insulator by Electron Beam Annealing and Performance of MOS Devices : A-6: SILICON CRYSTALS
• Characterization of Defects in As-Implanted and Laser-Annealed Si Layer together with Electrical Properties of As Atoms
• Characterization of Polycrystalline Silicon MOS Transistors and Its Film Properties. I
• Resistivity Reduction of Polycrystalline Silicon Film by Laser Annealing : A-3: LASER ANNEALING/SOS DEVICES
• Effects of Implantation Dose and Laser Beam Wavelength on Sheet Resistivity Reduction for As-Implanted Poly-Si Films by Q-Switched Nd: YAG Laser Irradiation
• Stripe Shaped Crystal Growth and Its Model of Silicon Films on Silicon Nitride Layer by Scanning Electron Beam Annealing
• Micro-probe Auger Analysis of Si Migration in Al Metallization for LSI : A-3: DEVICE TECHNOLOGY (III)
• Solid-Phase Lateral Epitaxial Growth onto Adjacent SiO_2 Film from Amorphous Silicon Deposited on Single-Crystal Silicon Substrate
• Automatic Angular Distribution Measuring System in Rutherford Backscattering Analysis
• Electron Irradiation Effect in the Quantitative Auger Analysis of PSG

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