Shibata Kenji | Toshiba Research And Development Center
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概要
関連著者
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Shibata Kenji
Toshiba Research And Development Center
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INOUE Tomoyasu
Toshiba Research and Development Center
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KASHIWAGI Masahiro
Toshiba Research and Development Center
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ONGA Shinji
Toshiba Research and Development Center
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KOHYAMA Susumu
Toshiba Semiconductor Device Engineering Laboratory
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MIZUTANI Yoshihisa
Toshiba Research and Development Center
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OHMURA Yamichi
Toshiba Research and Development Center
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KATO Koichi
Toshiba Research and Development Center
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HORIIKE Yasuhiro
Toshiba Research and Development Center
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TANIGUCHI Kenji
Toshiba Research and Development Center
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KOHYAMA Susumu
Semiconductor Device Laboratory
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NAGAKUBO Yoshihide
Semiconductor Device Laboratory
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IIZUKA Hisakazu
Semiconductor Device Laboratory
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Horiike Yasuhiro
Department Of Materials Science The University Of Tokyo
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Horiike Yasuhiro
Department Of Electrical Engineering Hiroshima University
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Inoue Tomoyasu
Toshiba Research And Development Center Toshiba Corporation
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Ohmura Yamichi
Toshiba R And D Center Tokyo Shibaura Electric Co. Ltd.
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Kohyama Susumu
Semiconductor Device Engineering Laboratory
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Kohyama Susumu
Toshiba Research And Development Center
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TAKIGAWA Tadahiro
Toshiba Research and Development Center, Toshiba Corporation
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Horiike Yasuhiro
Department Of Materials Engineering The University Of Tokyo
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Horiike Yasuhiro
Department Of Electrical And Electronics Engineering Toyo University:department Of Materials Science
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Horiike Yasuhiro
Toshiba Research And Development Center Integrated Circuit Laboratory
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Horiike Yasuhiro
Toyo University
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Iizuka Hisakazu
Semiconductor Device Engineering Laboratory
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Takigawa Tadahiro
Toshiba Research And Development Center Toshiba Corporation
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Mizutani Yoshihisa
Toshiba Semiconductor Device Engineering Laboratory
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Shibata Kenji
Toshiba Research And Development Center Toshiba Corporation
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Horiike Yasuhiro
Department Of Electrical & Electronics Engineering Toyo University
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SHIBATA Kenji
Toshiba Research and Development Center, Toshiba Corporation
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KASHIWAGI Masahiro
Toshiba Research and Development Center, Toshiba Corporation
著作論文
- Growth of Large Grained Silicon on Insulator by Electron Beam Annealing and Performance of MOS Devices : A-6: SILICON CRYSTALS
- Characterization of Defects in As-Implanted and Laser-Annealed Si Layer together with Electrical Properties of As Atoms
- Characterization of Polycrystalline Silicon MOS Transistors and Its Film Properties. I
- Resistivity Reduction of Polycrystalline Silicon Film by Laser Annealing : A-3: LASER ANNEALING/SOS DEVICES
- Effects of Implantation Dose and Laser Beam Wavelength on Sheet Resistivity Reduction for As-Implanted Poly-Si Films by Q-Switched Nd: YAG Laser Irradiation
- Stripe Shaped Crystal Growth and Its Model of Silicon Films on Silicon Nitride Layer by Scanning Electron Beam Annealing