Stripe Shaped Crystal Growth and Its Model of Silicon Films on Silicon Nitride Layer by Scanning Electron Beam Annealing
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1982-05-20
著者
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Shibata Kenji
Toshiba Research And Development Center
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INOUE Tomoyasu
Toshiba Research and Development Center
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Inoue Tomoyasu
Toshiba Research And Development Center Toshiba Corporation
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TAKIGAWA Tadahiro
Toshiba Research and Development Center, Toshiba Corporation
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Takigawa Tadahiro
Toshiba Research And Development Center Toshiba Corporation
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Shibata Kenji
Toshiba Research And Development Center Toshiba Corporation
関連論文
- Growth of Large Grained Silicon on Insulator by Electron Beam Annealing and Performance of MOS Devices : A-6: SILICON CRYSTALS
- Characterization of Defects in As-Implanted and Laser-Annealed Si Layer together with Electrical Properties of As Atoms
- Characterization of Polycrystalline Silicon MOS Transistors and Its Film Properties. I
- Resistivity Reduction of Polycrystalline Silicon Film by Laser Annealing : A-3: LASER ANNEALING/SOS DEVICES
- Effects of Implantation Dose and Laser Beam Wavelength on Sheet Resistivity Reduction for As-Implanted Poly-Si Films by Q-Switched Nd: YAG Laser Irradiation
- Stripe Shaped Crystal Growth and Its Model of Silicon Films on Silicon Nitride Layer by Scanning Electron Beam Annealing
- Micro-probe Auger Analysis of Si Migration in Al Metallization for LSI : A-3: DEVICE TECHNOLOGY (III)
- Emission Characteristics for , and LaB_6 Cathodes
- Automatic Angular Distribution Measuring System in Rutherford Backscattering Analysis
- Electron Irradiation Effect in the Quantitative Auger Analysis of PSG