Growth of Large Grained Silicon on Insulator by Electron Beam Annealing and Performance of MOS Devices : A-6: SILICON CRYSTALS
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-02-28
著者
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Shibata Kenji
Toshiba Research And Development Center
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OHMURA Yamichi
Toshiba Research and Development Center
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INOUE Tomoyasu
Toshiba Research and Development Center
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KATO Koichi
Toshiba Research and Development Center
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HORIIKE Yasuhiro
Toshiba Research and Development Center
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KASHIWAGI Masahiro
Toshiba Research and Development Center
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Horiike Yasuhiro
Department Of Materials Science The University Of Tokyo
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Horiike Yasuhiro
Department Of Electrical Engineering Hiroshima University
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Ohmura Yamichi
Toshiba R And D Center Tokyo Shibaura Electric Co. Ltd.
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Horiike Yasuhiro
Department Of Materials Engineering The University Of Tokyo
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Horiike Yasuhiro
Department Of Electrical And Electronics Engineering Toyo University:department Of Materials Science
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Horiike Yasuhiro
Toshiba Research And Development Center Integrated Circuit Laboratory
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Horiike Yasuhiro
Toyo University
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Horiike Yasuhiro
Department Of Electrical & Electronics Engineering Toyo University
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