Digital Chemical Vapor Deposition of SiO_2 Using a Repetitive Reaction of Triethylsilane/Hydrogen and Oxidation
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概要
- 論文の詳細を見る
The extraction reaction of hydrogen in triethylsilane (TES) with hydrogen radicals generated by a remote plasma of H_2 produces an organic Si film. Step coverage features of the film depend strongly on H_2 concentration in the TES+H_2 reaction system. A conformal profile has been achieved for 60% H_2 at 250℃ as a result of the low-viscosity nature of the film which includes C_xH_y groups. With the aim of filling a deep trench with high-quality SiO_2 film, digital chemical vapor deposition (CVD), which was carried out by repeating a cycle of the conformal deposition of the Si film and subsequent oxidation, was studied. The SiO_2 film which was deposited at 250℃ and with an initial thickness per cycle of 5 Å at a 1 s oxygen pulse offered a low concentration of organic species, and thus a relatively low BHF etch rate.
- 社団法人応用物理学会の論文
- 1991-01-15
著者
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Horiike Yasuhiro
Department Of Materials Science The University Of Tokyo
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Horiike Yasuhiro
Department Of Electrical & Electronics Engineering Tokyo University
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Horiike Yasuhiro
Department Of Electrical Engineering Hiroshima University
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Sakaue Hiroyuki
Department Of Electrical Engineering Hiroshima University
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Horiike Yasuhiro
Department Of Materials Engineering The University Of Tokyo
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Horiike Yasuhiro
Department Of Electrical And Electronics Engineering Toyo University:department Of Materials Science
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Horiike Yasuhiro
Toshiba Research And Development Center Integrated Circuit Laboratory
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Horiike Yasuhiro
Toyo University
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Nakano Masayuki
Department Of Electrical Engineering Hiroshima University
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Ichihara Tsutomu
Department of Electrical Engineering, Hiroshima University
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Ichihara Tsutomu
Department Of Electrical Engineering Hiroshima University
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Horiike Yasuhiro
Department Of Electrical & Electronics Engineering Toyo University
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