Downstream Etching of Si and SiO_2 Employing CF_4/O_2 or NF_3/O_2 at High Temperature : Etching and Deposition Technology
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1989-12-30
著者
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ICHIHASHI Hideki
Faculty of Engineering, Hiroshima University
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Horiike Yasuhiro
Department Of Materials Science The University Of Tokyo
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Horiike Yasuhiro
Faculty Of Engineering Hiroshima University
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Horiike Yasuhiro
Department Of Electrical Engineering Hiroshima University
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Ichihashi Hideki
Faculty Of Engineering Hiroshima University
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Nagata Akiyoshi
Faculty Of Engineering Hiroshima University
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Horiike Yasuhiro
Department Of Materials Engineering The University Of Tokyo
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Horiike Yasuhiro
Department Of Electrical And Electronics Engineering Toyo University:department Of Materials Science
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Horiike Yasuhiro
Toshiba Research And Development Center Integrated Circuit Laboratory
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Horiike Yasuhiro
Toyo University
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KUSUNOKI Yasutomo
Faculty of Engineering, Hiroshima University
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Horiike Yasuhiro
Department Of Electrical & Electronics Engineering Toyo University
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Kusunoki Yasutomo
Faculty Of Engineering Hiroshima University
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